Enhancing the light output power of deep ultraviolet light-emitting diodes with a ultra-thin p-type layer through etching non-ohmic contact p-GaN region
Abstract
In this study, we employ the etching non-ohmic contact p-type region to enhance the performance of deep ultraviolet light-emitting diodes (DUV-LEDs) with ultra-thin (62 nm) p-type layers. Experimental results demonstrate that a shallow etching depth (12 nm) can enhance the light output power (LOP) of DUV-LEDs by 10.9%. However, when the etching depth is increased slightly to 18 nm, the LOP of DUV-LEDs decreases by 42%. Moreover, the forward leakage current of the device is severely deteriorated, while the reverse leakage current remains unaffected. This is because ultra-thin p-type layers fail to prevent the etch-inducing defects from propagating into the active region, thereby inducing a defect-related parallel diode and reducing the internal quantum efficiency. Conversely, a shallower etching depth can enhance light extraction efficiency and mitigate etch-inducing defects in the DUV-LEDs with ultra-thin p-type layers. These findings indicate that the p-type layer etching process for improving the performance of advanced DUV-LEDs with an ultra-thin p-type layer must be carefully optimized.
Article Details
Journal Info
Journal of Applied Physics
American Institute of Physics
Authors (17)
Hualiang Qiu
State Key Laboratory of Quantum Optics Technologies and Devices, Shanxi University 1 , Taiyuan, Shanxi 030006,
Linhao Wang
Hefei National Research Center for Physical Sciences at the Microscale, and Hefei National Laboratory, University of Science and Technology of China 1 , Hefei, Anhui 230026,
Yanan Guo
State Key Laboratory of Ophthalmology, Zhongshan Ophthalmic Center, Guangdong Provincial Key Laboratory of Ophthalmology and Visual Science, Sun Yat-sen University
Kai Guo
State Key Laboratory of Southwestern Chinese Medicine Resources, and Innovative Institute of Chinese Medicine and Pharmacy
Xiaona Zhang
Xiaolong Jia
Hydrogen Energy Industry Institute of Jilin Province
Congmin Shen
Advanced Ultraviolet Optoelectronics Co. Ltd 6 , Changzhi, Shanxi 046000,
Tong Zhang
Xue-Jiao Sun
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences 4 , Beijing 100083,
Xuecheng Wei
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences 3 , Beijing 100083,
Shen Wang
Junxi Wang
Jinmin Li
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences 4 , Beijing 100083,
Yonghui Zhang
Zi-Hui Zhang
Tianjin Key Laboratory of Biosensing and Molecular Recognition, Research Center for Analytical Sciences, Frontiers Science Center for New Organic Matter, Haihe Laboratory of Sustainable Chemical Transformations, College of Chemistry
Naixin Liu
Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences 3 , Beijing 100083,
Jianchang Yan
Research and Development Center for Wide Bandgap Semiconductors, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,