Journal of Applied Physics
Articles in this Issue
Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation
We have studied the oxidation states and photoluminescence (PL) properties of GaAs(100) samples that incorporated buried InGaAs quantum well (QW) structures prepared by molecular-beam epitaxy (MBE). T...
On dispersion and dissipation of elastic wave-fronts in piezoelectric semiconductors
When an elastic wave propagates in piezoelectric semiconductors, the interaction between charge carriers and electric fields on the elastic wave-front (EWF) generates a coupled wave, termed the field-...
Wavelength-tunable Zn1−xMgxO nanotube lasers on graphene films
Wavelength-tunable lasers on various substrates, such as silicon and metal, are crucial for emerging optoelectronic applications such as photonic chip communication and biological optical probes. Here...
A comparative consideration of the link between poling procedure, induced damage, and piezoelectric response in perovskite ferroelectrics
There has been much interest in recent years in improving Direct Current Poling (DCP) for piezoelectric materials. Some of the more promising substitutes include Alternating Current Poling (ACP), Wate...
Excitonic effects at the temperature-dependent <i>E</i>1 and <i>E</i>1 + Δ1 critical points of Ge
We investigated excitonic effects in the complex dielectric function of Ge near the E1 and E1+Δ1 critical points as a function of temperature. By employing Tanguy’s theory for two-dimensional excitons...
Magnetic shape anisotropy of high-axial-ratio cobalt nanoparticles in nanogranular films
Magnetic shape anisotropy is a principle guiding the nano-scale design of magnetic hetero-structures against competitive thermal fluctuation. Here, we have fabricated self-organized nanogranular films...
The effect of boron incorporation on leakage and wake-up in ferroelectric Al1−xScxN
This study explores the influence of boron incorporation on the structural and electrical properties of ferroelectric aluminum scandium nitride (Al1-xScxN) thin films, focusing on leakage currents, wa...
Voltage noise thermometry in integrated circuits at millikelvin temperatures
This paper demonstrates the use of voltage noise thermometry, with a cross-correlation technique, as a dissipation-free method of thermometry inside a CMOS integrated circuit (IC). We show that this t...