Journal of Applied Physics

Vol. 139, Issue 7 Issue 7 2026
58
Articles

Articles in this Issue

GdIMH (M = S, Se) monolayers: 2D bipolar magnetic semiconductors

Shujing Li, Mei Zhou, Menglei Li et al. Feb 21, 2026 10.1063/5.0281719

In this study, we predict a class of two-dimensional f-electron bipolar magnetic semiconductors, GdIMH (M=S,Se), using first-principles calculations. Monolayer GdIMH has excellent dynamic and thermal...

Mid-infrared ellipsometry for optical critical dimension metrology

G. Andrew Antonelli, Troy. D. Ribaudo, Nick Keller Feb 21, 2026 10.1063/5.0310009

Mid-infrared ellipsometry offers a powerful approach for non-destructive optical critical dimension (OCD) metrology in advanced semiconductor manufacturing. This technique supports in-line measurement...

Formation of jets from hemispherical shaped charge liners

Drew C. Marable, Justin C. Sweitzer, Nicholas J. Ginga Feb 21, 2026 10.1063/5.0305169

Accurately predicting shaped charge jet formation remains a central challenge in detonation physics as analytic models developed for conical liners do not readily extend to alternative geometries used...

Hole transport analysis in N-polar p-GaN

Masahiro Kamiyama, Shashwat Rathkanthiwar, Cristyan E. Quiñones et al. Feb 21, 2026 10.1063/5.0316562

The transport-limiting scattering mechanisms in N-polar p-GaN were identified over a wide range of temperatures (220–770 K), Mg doping concentrations (3 × 1018–4 × 1019 cm−3), and V/III ratios (100–80...

Surface feature retardation in laser-based metal processing via dynamic bimodal beam modulation

Marco Rupp, Shuichiro Hayashi, Ankit Das et al. Feb 21, 2026 10.1063/5.0308066

Laser-based metal manufacturing techniques, such as laser welding and additive manufacturing, offer high precision and versatility, but the complex melting and resolidification processes often lead to...

Third harmonic-mediated amplification in TWPA

E. Rizvanov, S. Kern, P. Neilinger et al. Feb 21, 2026 10.1063/5.0297569

In Josephson traveling-wave parametric amplifiers, higher-order harmonics of the pump tone and its sidebands are commonly present and typically regarded as parasitic. Consequently, most design efforts...

Plane wave configuration for spectroscopic Mueller matrices and diffraction efficiencies of polarization beam splitting metasurfaces at normal and oblique incidence

Victoria M. Bjelland, Morten Kildemo Feb 21, 2026 10.1063/5.0311134

Transmission polarization beam splitting metasurfaces (MSs) made of dielectric resonators are investigated using diffractive order Mueller Matrix Ellipsometry (MME) in a plane wave configuration using...

Tunable thermal emission and waveguiding by SiC nanowires via collective localized surface phonons

Joseph C. McKay, Bart Raeymaekers, Mathieu Francoeur Feb 21, 2026 10.1063/5.0300185

This work investigates the thermal emission from SiC nanowires mediated by collective localized surface phonons (cLSPhs). Specifically, the spectral, directional emissivity of solitary and chains of S...

High-throughput parasitic-independent probe thermal resistance calibration for robust thermal mapping with scanning thermal microscopy

Ram Munde, Heng-Ray Chuang, Raisul Islam Feb 21, 2026 10.1063/5.0312015

Nanostructured materials, critical for thermal management in semiconductor devices, exhibit a strong size dependence in thermal transport. Studying thermal resistance variation across grain boundaries...

Mode-resolved logarithmic quasiballistic heat transport in thin silicon layers: Semianalytic and Boltzmann transport analysis

Jae Sik Jin Feb 21, 2026 10.1063/5.0315163

Nonequilibrium phonon transport driven by nanoscale hotspot heating in silicon device layers governs heat dissipation in advanced microelectronics and underscores the need for a better microscopic und...

Digitally coded bianisotropic metasurface for direction-dependent elastic wave control

Yashasvi Shanker Sharma, Serife Tol Feb 21, 2026 10.1063/5.0305158

Willis metamaterials are periodic structures with engineered asymmetries that exhibit Willis coupling, a non-classical constitutive behavior linking stress to velocity and momentum to strain. This cou...

Evaluation of structural properties and defect energetics in Al <i>x</i> Ga1− <i>x</i> N alloys

Farshid Reza, Beihan Chen, Miaomiao Jin Feb 21, 2026 10.1063/5.0309059

AlxGa1−xN alloys are essential for high-performance optoelectronic and power devices; yet, the role of composition on defect energetics remains underexplored, largely due to the limitations of first-p...

High thermal boundary conductance across a GaN/SiC interface characterized via signal-ratio-based dual-frequency time-domain thermoreflectance

Husam Walwil, Yiwen Song, Seung Hoon Lee et al. Feb 21, 2026 10.1063/5.0303711

To realize the full potential of GaN high electron mobility transistors (HEMTs), device-level thermal management is necessary by reducing the thermal resistance of the constituent layers, substrate, a...

Optical microcavity structures for time-resolved meso-scale sensing of pressure during shock-compression of heterogeneous materials

David A. Scripka, Zhitao Kang, Christopher J. Summers et al. Feb 21, 2026 10.1063/5.0305427

Optical microcavity structures (OMCs) exhibit unique spectral responses that can be correlated to externally applied loads, with the potential to be used as time-resolved pressure sensors during dynam...

Muography with symmetric background subtraction

Peter Filip Feb 21, 2026 10.1063/5.0273580

Radiographic analysis of the cosmic muon flux measured by the underground or surface detectors is usually based on the subtraction of the uninteresting background flux, obtained by the Monte Carlo sim...

Simulation of crystallization dynamics in phase change materials induced by femtosecond laser radiation

P. E. L’vov, A. S. Kadochkin, E. P. Kitsyuk et al. Feb 21, 2026 10.1063/5.0314468

In this study, we develop a phenomenological phase-field model of crystallization in phase change materials using Ge2Sb2Te5 as an example. We investigate the phase transition between amorphous and cry...

Formation of low-resistance layer in diamond by ultraheavy N+ doping by ion implantation beyond the CVD doping limit

Kaiya Imamura, Yuhei Seki, Sakura Uehara et al. Feb 21, 2026 10.1063/5.0315014

We report the successful realization of low-resistance layer by high-concentration nitrogen doping in single-crystal diamond using high-temperature ion implantation. While nitrogen has been considered...

Deep learning-based passive elastography using U-Net architecture

Maud Legrand, Nina Dufour, Emmanuel Martins Seromenho et al. Feb 21, 2026 10.1063/5.0302399

Since the early days of medical practice, assessing tissue stiffness has been a key component in evaluating tissue health. To estimate this parameter quantitatively and non-invasively, a variety of el...

Scaling behavior of dynamic hysteresis in Bi3.25Pr0.75Ti3O12 thin films

Z. Z. Hui, K. F. Yang, J. Yang et al. Feb 21, 2026 10.1063/5.0316812

The loop area ⟨A⟩ is related to the applied electric field E and frequency f by a power-law scaling relationship, which can be described as ⟨A⟩∝fa⋅Eb. Many experiments have confirmed that this relatio...

Tunable thermal transport in hole-doped monolayer penta-graphene: A first-principles and machine-learning study

Le Nhat Thanh, Duy Khanh Nguyen, Pham Thi Bich Thao et al. Feb 21, 2026 10.1063/5.0308716

In conventional semiconductors, electron–phonon coupling (EPC) is weaker than phonon–phonon (ph–ph) scattering and plays little role in lattice thermal conductivity (κL). We show, using first-principl...

Tunable 2D atomic localization via azimuthal quantum number in a four-level tripod-type system

Muhammad Idrees, Yuee Xie, Yuanping Chen et al. Feb 21, 2026 10.1063/5.0302871

In this work, we explore a tunable scheme for achieving precise two-dimensional (2D) atomic localization in a four-level tripod atomic system. The system is driven by two control fields with orbital a...

Toward 4D modelization of thermal-field emission from semiconductors

Salvador Barranco Cárceles, Aquila Mavalankar, Veronika Zadin et al. Feb 21, 2026 10.1063/5.0302109

The theoretical understanding of thermal-field emission (TFE) from semiconductors has been limited to 1D and 2D models. This can be attributed to the complex and interdependent phenomena involved in T...

Investigation of localized reaction initiation in polytetrafluoroethylene/aluminum reactive materials under shock compression

Weixi Tian, Zhenwei Zhang, Yansong Yang et al. Feb 21, 2026 10.1063/5.0302603

The localized initiation and reaction extent in polytetrafluoroethylene/aluminum (PTFE/Al) reactive materials under shock compression were investigated through experimental, numerical, and theoretical...

Spread-out Bragg peak Monte Carlo simulation of proton therapy with 15N-targeted <i>in situ</i> generation of 12C ions and α-particles

Junxiang Wu, Zhencen He, Zhao Sun et al. Feb 21, 2026 10.1063/5.0302593

Proton therapy has been criticized due to its relatively low biological effectiveness compared with heavy particle therapy, for example, 12C ion therapy. Recently, we proposed a new strategy for proto...

Effect of macroscopic surface defects on dynamic damage: An experimental and numerical study

Thao Nguyen, David R. Jones, Daniel T. Martinez et al. Feb 21, 2026 10.1063/5.0307172

This study examines the impact of macroscopic surface defects on the dynamic ductile damage behavior of polycrystalline metals using plate-impact experiments. Defects of various shapes (flat, round, a...

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Journal Info

Publisher American Institute of Physics
ISSN 0021-8979
E-ISSN 1089-7550
Subject Physical Sciences
Language English
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