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The RecA-NT homology motif in ImuB mediates the interaction with ImuA′, which is essential for DNA damage–induced mutagenesis
Visible-blind bipolar response photodetector based on GaN/ZnO:Ga/GaAs double heterojunctions for dual-band optoelectronic logic operation
Bipolar response photodetectors have sparked considerable interest in optical switches, smart chips, and artificial neuroscience, but invisible ones are still scarce. Here, a visible-blind bipolar response photodetector based on GaN/ZnO:Ga/GaAs double heterojunctions is proposed. Under self-powered conditions, the designed photodetector only shows dual-band photoresponse in the ultraviolet (UV) and infrared (IR) spectrum. Specifically, originating from the absorption characteristics and suitable energy band of multilayered structures, it exhibits positive (negative) photocurrents under UV (IR) illumination. The maximum responsivity of 4.7 mA/W (−1.8 mA/W) under the UV (IR) illumination and fast response time (19.6/36.8 μ s) are achieved. Dual-band optoelectronic logic operations, including OR, AND, NOR, NOT, and NAND, are realized with a single photodetector by precisely regulating the UV and IR illumination. This work paves an approach for the development of visible-blind bipolar photodetection and all-in-one optoelectronic logic gates.
Disruption of deoxyribonucleotide triphosphate biosynthesis leads to RAS proto-oncogene activation and perturbation of mitochondrial metabolism
Band structure modulation of chalcogenide perovskite with Eu as A-site cation
Chalcogenide perovskites with distorted structures, such as BaZrS3 and SrZrS3, are promising photovoltaic materials due to their high stability, strong absorption, and excellent electrical transport properties. Researchers have explored BaZr1-xTixS3 and BaZrS3-xSex alloys to reduce their band gaps, allowing them to absorb lower-energy photons. However, the hexagonal structures of BaTiS3 and BaZrSe3, along with the incompatibility of Ti or Se atoms in BaZrS3, lead to phase separation in these alloys. In this work, using EuZrS3 and Sr0.7Eu0.3ZrS3 alloys as examples, we demonstrate that the band structure of chalcogenide perovskites can be tuned by using Eu as the A-site cation. In EuZrS3, the Eu 4f orbitals contribute to the valence band maximum, thereby raising the valence band and resulting in a narrow bandgap of 0.54 eV. Furthermore, due to the structural and atomic compatibility of Eu with SrZrS3, the Sr1-xEuxZrS3 alloy is designed to fine-tune the band structures of both SrZrS3 and EuZrS3. EuZrS3 also exhibits typical semiconducting characteristics, making it promising for potential optoelectronic devices.
A new regulation mechanism for KCNN4, the Ca2+-dependent K+ channel, by molecular interactions with the Ca2+pump PMCA4b
High-pressure modulation of altermagnetism in MnF2
We investigate the phase transition behavior and electronic band structure of MnF2 under high pressures ranging from 0 to 20 GPa based on first-principles calculations. At ambient pressure, MnF2 in the rutile structure displays antiferromagnetic properties along with significant altermagnetic characteristics. Upon increasing pressure, MnF2 undergoes sequential phase transitions from the rutile structure to the SrI2-type structure and further to the α-PbCl2-type structure. Under high pressure, all three structures of MnF2 exhibit stable altermagnetism, with the maximum spin splitting of 307.5 meV at 3 GPa for the rutile structure, 133.6 meV at 12 GPa for the SrI2-type structure, and 58.4 meV at 20 GPa for the α-PbCl2-type structure. Additionally, our findings suggest that the magnitude of spin splitting can be effectively controlled by modulating the antiferromagnetic exchange interactions and the electron hopping parameters between sublattices. This work elucidates the crystal structure, electronic structure, and altermagnetic properties of MnF2 under high pressure, providing important theoretical foundations for expanding the library of altermagnetic materials.
Hypusinated and unhypusinated isoforms of the translation factor eIF5A exert distinct effects in models of pancreas development and function
Molecule design enabled high efficiency flexible zirconium-based lead-free perovskite scintillator
Metal halide perovskites are the most promising candidates in the field of X-ray detection and imaging. However, the self-absorption and toxicity of lead-based perovskites severely limit their widespread application. Herein, zirconium-based halide perovskites have attracted much attention due to their excellent stability, low toxicity, and suitable bandgap, self-free absorption, wide emission spectrum. In this work, (C8H20N)2ZrCl6 single crystals are synthesized by evaporation crystallization, which presents a large Stokes shift of 203 nm, a high PLQY of 80.77%, and good stability over 180 days. Then, the assembled (C8H20N)2ZrCl6@PDMS films show good flexibility (bending and stretching) and a spatial resolution of 5.8 lp/mm. Thus, this work not only provides a route to explore lead-free metal halide perovskites with broadband emission but also demonstrates flexible zirconium-based scintillators for X-ray scintillation imaging.
The steroid hormone 20-hydroxyecdysone induces lipophagy via the brain-adipose tissue axis by promoting the adipokinetic hormone pathway
Enhancing CZTSSe solar cell efficiency to 11.07% with NaClO-induced Mo texturing for improved light management and carrier collection
This study systematically investigates the optimization mechanism of NaClO solution treatment on Mo substrates for enhancing the optoelectronic performance of CZTSSe thin film solar cells. Experimental results demonstrate that a 10 s NaClO soaking forms a “spike-like” texture on the Mo surface, increasing the average surface roughness difference from 34.52 to 77.75 nm. This significantly enhances light scattering, particularly for photons reaching the back Mo electrode, thereby extending the optical path and promoting photon reabsorption. Additionally, the roughened Mo surface improves the wettability of the precursor solution (contact angle decreases from 19.3° to 12.7°), facilitating the formation of larger CZTSSe grains. Electrical characterization reveals that the NaClO-treated Mo substrate significantly reduces the density of negative charge traps at CZTSSe grain boundaries (contact potential difference increases from −1.1 V to −263 mV), suppressing hole recombination and optimizing carrier collection efficiency. The spike-like structure of the Mo surface also shortens the transport path of hole carriers generated by short-wavelength light, further enhancing collection efficiency. Ultimately, the PCE of CZTSSe devices based on the Mo-10 substrate increases from 9.34% to 11.07%, attributed to the reduction in Rs and J0. This study highlights the critical role of a back electrode interface microstructure design in synergistically optimizing light absorption and carrier transport.