Browse Articles

Correction: Characterization of a cytochrome P450 that catalyzes the O-demethylation of lignin-derived benzoates

Maternal obesity alters histone modifications mediated by the interaction between EZH2 and AMPK, impairing neural differentiation in the developing embryonic brain cortex

Pancreatic expression of CPT1A is essential for whole body glucose homeostasis by supporting glucose-stimulated insulin secretion

Missense mutations of the ephrin receptor EPHA1 associated with Alzheimer’s disease disrupt receptor signaling functions

Unveiling ADAMTS12: A key driver of bladder cancer progression via COL3A1-Mediated activation of the FAK/PI3K/AKT signaling pathway

The C-terminal α-helix is crucial for the activity of the bacterial ABC transporter BmrA

New insights in uranium bioremediation by cytochromes of the bacterium Geotalea uraniireducens

Autophagy-related 7 (ATG7) regulates food intake and liver health during asparaginase exposure

Specific recognition mechanism of an antibody to sulfated tyrosine and its potential use in biological research

Axin-binding domain of glycogen synthase kinase 3β facilitates functional interactions with voltage-gated Na+ channel Nav1.6

Resilience and charge-dependent fibrillation of functional amyloid: Interactions of Pseudomonas biofilm-associated FapB and FapC amyloids

Structural basis of the bifunctionality of Marinobacter salinexigens ZYF650T glucosylglycerol phosphorylase in glucosylglycerol catabolism

ID3 promotes erythroid differentiation and is repressed by a TAL1–PRMT6 complex

A coplanar electrode operating mode for piezoelectric energy harvesting and self-powered sensing

Piezoelectric semiconductors have emerged as a prominent area of research in recent years due to their unique combination of piezoelectric and semiconductor properties. In this Letter, we propose a piezoelectric device structure featuring coplanar electrodes positioned above the piezoelectric layer. We have conducted a detailed theoretical analysis of the piezoelectric properties of this piezoelectric device. By utilizing a coplanar electrode piezoelectric mode, pressure applied to one electrode generates a potential difference between the two electrodes. Notably, the piezoelectric performance of the device can be adjusted by modifying its structure. Numerical simulations and experimental results indicate that the piezoelectric performance reaches an optimal value when the distance between the electrodes is equal to one-half of the electrode length. Additionally, we have developed a method to enhance the piezoelectric voltage output capability of the device under low load resistance conditions. Specifically, by introducing charge carriers into the piezoelectric layer from the doped silicon substrate, the device's resistance is reduced due to the Schottky contact. The piezoelectric operating mode proposed in this paper facilitates energy harvesting and self-powered sensing, distinguishing it from the d31 and d33 operational modes associated with traditional sandwich device structures, thereby allowing for more versatile device configurations.

Human α10 nicotinic acetylcholine receptor subunits assemble to form functional receptors

Unconventional in-plane field-like spin–orbit torques induced by rare-earth Dy interface in Py/Dy/Pt tri-layers

Spin transport across an interface in energy-efficient spintronic devices, especially for spin–orbit torque applications, has sparked interest in the spintronics community. Here, we employ a rare-earth metal spacer Dy to modify the interface of a Py-based heterostructure, with the aim of modulating the spin dynamics of the system and thereby controlling the spin–orbit torques. As the thickness of Dy increases, it is found that the saturation magnetization of Py/Dy decreases and eventually reaches a plateau, suggesting the induced magnetic moment of Dy that aligns opposite to the Fe and Ni moments. Such a self-assembled antiferromagnetic interface can be destroyed by the insertion of a Cu layer between Py and Dy. Utilizing this interface effect, an additional spin dissipation is observed by enhancement of spin dynamic damping, which has achieved a high spin mixing conductance at the interface of Py/Dy according to spin pumping theory. Utilizing the Py/Dy interface, an unconventional in-plane field-like torque spin–orbit torque (SOT) in a Py/Dy/Pt structure is achieved, while the field-like SOT efficiency experiences a notable enhancement in the Py/Dy/Pt system. By optimizing the interface between the Dy layer and Pt, it is possible to further enhance the performance and efficiency of the devices, thereby promoting the development of spintronic devices. This discovery has significant implications for the future design of low-power spintronic devices.

DNMT3b-mediated CpA methylation facilitates REST binding and gene silencing and exacerbates hippocampal demyelination in diabetic mice

Resonant inter-mode second harmonic generation by backward spin waves in YIG nano-waveguides

We experimentally study the nonlinear generation of the second harmonic by backward volume spin waves propagating in microscopic magnonic waveguides fabricated from a low-loss magnetic insulator with a thickness of several tens of nanometers. We show that highly efficient resonant second harmonic generation is possible in the inter-mode regime at microwave powers of the order of 10−4 W. In contrast to previously observed second harmonic generation processes, the generation by backward waves is characterized by the nonlinearly generated waves propagating opposite to the initial waves and can be realized at zero bias magnetic field.

The viral serpin SPI-1 directly inhibits the host cell serine protease FAM111A

Vertical Al2O3/GaN MOS capacitors with PEALD-GaO<i>x</i> interlayer passivation

In this Letter, we report high-quality vertical GaN metal–oxide–semiconductor (MOS) capacitors with sulfur passivation and a plasma-enhanced atomic layer deposition -grown GaOx interlayer, exhibiting a low interface trap density (Dit) of ∼8 × 1010 cm−2 eV−1 and a low frequency-dependent flatband voltage shift [ΔVFB (f)] of ∼20 mV (from 1 kHz to 1 MHz). The introduction of the GaOx interlayer effectively suppresses the leakage current (from ∼10−3 to ∼10−6 A/cm2 under 10 V positive bias) and passivates nitrogen/oxygen-related vacancies and dangling bonds. The demonstrated controllable and low-destructive passivation technique provides the insights and methodologies for the fabrication of high-performance GaN MOS structure-based devices.