Visible-blind bipolar response photodetector based on GaN/ZnO:Ga/GaAs double heterojunctions for dual-band optoelectronic logic operation

P Peng Wan L Lixiang Sun J Jiadong Chen (Advanced Materials and Catalysis Group, Center of Chemistry for Frontier Technologies, State Key Laboratory of Clean Energy Utilization, Institute of Catalysis, Department of Chemistry) F Fazheng Zhang (College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics , No. 29 Jiangjun Road, Nanjing 211106,) R Ruiming Dai (College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics , No. 29 Jiangjun Road, Nanjing 211106,) H Huijie Feng (College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics , No. 29 Jiangjun Road, Nanjing 211106,) D Daning Shi (College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics , No. 29 Jiangjun Road, Nanjing 211106,) C Caixia Kan M Mingming Jiang

Abstract

Bipolar response photodetectors have sparked considerable interest in optical switches, smart chips, and artificial neuroscience, but invisible ones are still scarce. Here, a visible-blind bipolar response photodetector based on GaN/ZnO:Ga/GaAs double heterojunctions is proposed. Under self-powered conditions, the designed photodetector only shows dual-band photoresponse in the ultraviolet (UV) and infrared (IR) spectrum. Specifically, originating from the absorption characteristics and suitable energy band of multilayered structures, it exhibits positive (negative) photocurrents under UV (IR) illumination. The maximum responsivity of 4.7 mA/W (−1.8 mA/W) under the UV (IR) illumination and fast response time (19.6/36.8 μ s) are achieved. Dual-band optoelectronic logic operations, including OR, AND, NOR, NOT, and NAND, are realized with a single photodetector by precisely regulating the UV and IR illumination. This work paves an approach for the development of visible-blind bipolar photodetection and all-in-one optoelectronic logic gates.

Article Details

Volume / Issue Vol. 126, Issue 8
Published February 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

P

Peng Wan

L

Lixiang Sun

J

Jiadong Chen

Advanced Materials and Catalysis Group, Center of Chemistry for Frontier Technologies, State Key Laboratory of Clean Energy Utilization, Institute of Catalysis, Department of Chemistry

F

Fazheng Zhang

College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics , No. 29 Jiangjun Road, Nanjing 211106,

R

Ruiming Dai

College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics , No. 29 Jiangjun Road, Nanjing 211106,

H

Huijie Feng

College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics , No. 29 Jiangjun Road, Nanjing 211106,

D

Daning Shi

College of Physics, MIIT Key Laboratory of Aerospace Information Materials and Physics, Key Laboratory for Intelligent Nano Materials and Devices, Nanjing University of Aeronautics and Astronautics , No. 29 Jiangjun Road, Nanjing 211106,

C

Caixia Kan

M

Mingming Jiang