Thermal-mechanical perspectives on hydrophilic- and surface-activated-bonding Si/SiC interfaces for SOI's thermal management enhancement
Abstract
Integrating high thermal conductivity cost-effective SiC to the Si-active-layer film is an effective solution to enhance the thermal performance of silicon-on-insulator (SOI) and maintain its distinct electrical performance. Although direct bonding of Si films to SiC substrates demonstrates many advantages over epitaxial growth, different bonding techniques may yield disparate bonding qualities and heat dissipation abilities. Here, a comparative analysis from thermal-mechanical-structural perspectives of different Si/SiC interfaces, prepared by hydrophilic bonding (HB) and surface-activated bonding (SAB) methods, is systematically conducted. It was found that the amorphous interlayer thickness and thermal boundary resistance (TBR) of the SAB-Si/SiC heterojunction can be significantly modulated by annealing, accompanied by a beneficial decreased TBR at high working temperatures. Moreover, the residual stress within the Si film by SAB is greatly reduced to an order of magnitude lower than that by HB. In general, the SAB-Si/SiC interface exhibits a tunable microstructure, comparably low TBR, and nearly fully relaxed stress, potentially outperforming the HB-Si/SiC interface when considering the comprehensive performance. This work puts forward an important thermal-mechanical perspective to evaluate interface bonding quality for practical applications, and removes a headache barrier toward wafer-scale high-yield integration of Si active layers onto SiC substrates to greatly enhance SOI devices' thermal management.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (13)
Yang He
Shun Wan
State Key Laboratory of Advanced Environmental Technology, Department of Environmental Science and Engineering, University of Science and Technology of China
Shi Zhou
Phonon Engineering Research Center of Jiangsu Province, Ministry of Education Key Laboratory of NSLSCS, School of Physics and Technology, Nanjing Normal University 3 , Nanjing 210023,
Zeming Huang
Anhui Laboratory of Clean Catalytic Engineering, Anhui Laboratory of Functional Complexes for Materials Chemistry and Application, College of Biological and Chemical Engineering
Yongwei Chang
State Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences 5 , Shanghai 200050,
Yu Yang
Xiaowu Gao
National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology 2 , Harbin 150080,
Yongze Xu
School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen 1 , Shenzhen 518055,
Jinfeng Yang
Department of Engineering
Shang Gao
Dengke Ma
Phonon Engineering Research Center of Jiangsu Province, Center for Quantum Transport and Thermal Energy Science, Institute of Physics Frontiers and Interdisciplinary Sciences, School of Physics and Technology, Nanjing Normal University , Nanjing 210023,
Yan Zhou
Huarui Sun
School of Science and Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System, Harbin Institute of Technology Shenzhen 1 , Shenzhen 518055,