Exceptionally high thermoelectric power factors at low temperatures in heavily doped p- and n-type Ge-rich Ge1−xSnx films

M Masashi Kurosawa (Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,) T Takayoshi Katase (MDX Research Center for Element Strategy, Institute of Integrated Research) Y Yukihiro Imai (Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,) M Masaya Nakata (Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,) M Masatoshi Kimura (Materials and Structures Laboratory, Institute of Integrated Research, Institute of Science Tokyo 2 , 4259 Nagatsuta, Midori, Yokohama, Kanagawa 226-8501,) T Toshio Kamiya (Materials and Structures Laboratory, Institute of Integrated Research, Institute of Science Tokyo, 4259 Nagatsuta, Midori, Yokohama 226-8501, Japan) S Shigehisa Shibayama (Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,) M Mitsuo Sakashita (Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,) O Osamu Nakatsuka (Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,)

Abstract

Low-temperature thermoelectric thin films compatible with semiconductor technology are of increasing interest for cryogenic energy harvesting and thermal management of advanced Si-based electronics. Here, we show that heavily doped p- and n-type Ge1−xSnx epitaxial films exhibit exceptionally high thermoelectric power factors (PF) at low temperatures owing to a pronounced phonon-drag effect. Hall-effect and Seebeck-effect analyses over a wide temperature range of 6–300 K reveal that this phonon-drag contribution, manifested as a strong enhancement of the Seebeck coefficient at low temperatures, persists even at high carrier concentrations approaching 1020 cm−3. Along with the simultaneous increase in electrical conductivity upon cooling, the PFs rise dramatically, reaching 1.4 × 102 and 4.7 × 103 μWcm−1 K−2 around 20 K for the p- and n-type films, respectively. These remarkably high PFs enhanced by phonon-drag effect demonstrate that heavily doped Ge1−xSnx provides a promising platform for low-temperature group-IV thin-film thermoelectrics.

Article Details

Volume / Issue Vol. 129, Issue 6
Published August 10, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

M

Masashi Kurosawa

Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,

T

Takayoshi Katase

MDX Research Center for Element Strategy, Institute of Integrated Research

Y

Yukihiro Imai

Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,

M

Masaya Nakata

Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,

M

Masatoshi Kimura

Materials and Structures Laboratory, Institute of Integrated Research, Institute of Science Tokyo 2 , 4259 Nagatsuta, Midori, Yokohama, Kanagawa 226-8501,

T

Toshio Kamiya

Materials and Structures Laboratory, Institute of Integrated Research, Institute of Science Tokyo, 4259 Nagatsuta, Midori, Yokohama 226-8501, Japan

S

Shigehisa Shibayama

Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,

M

Mitsuo Sakashita

Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,

O

Osamu Nakatsuka

Graduate School of Engineering, Nagoya University 1 , Furo-cho, Chikusa-ku, Nagoya 464-8603,