Unlocking room-temperature magnetoelectricity in Ba1.5Sr1.5-based Z-type hexaferrites via magnetic anisotropy modulation

H Huantong Wu (School of Physics, Harbin Institute of Technology 1 , Harbin 150001,) J Jun Li F Fuguang Han (School of Physics, Harbin Institute of Technology 1 , Harbin 150001,) D Dongpeng Zhao (School of Physics, Harbin Institute of Technology 1 , Harbin 150001,) Z Zeyang Zhang S Shuang Wang D Dengwei Yi (School of Physics, Harbin Institute of Technology 1 , Harbin 150001,) X Xiping Chen G Guangai Sun (Key Laboratory for Neutron Physics of CAEP, Institute of Nuclear Physics and Chemistry 3 , Mianyang 621999,) Z Zhongxiang Zhou (School of Physics, Harbin Institute of Technology 1 , Harbin 150001,)

Abstract

Current research on room-temperature magnetoelectric (ME) Z-type hexaferrites has predominantly centered on modifications based on Sr3Co2Fe24O41, which severely restricts the compositional freedom for regulating the Ba/Sr ratio. In particular, compositions with high Ba content, exemplified by the balanced Ba1.5Sr1.5Co2Fe24O41 (Ba1.5Sr1.5-based), are traditionally regarded as incapable of hosting room-temperature ME coupling, attributed to its distinct Co2+ site preference compared to Sr-rich counterparts. In this work, we realized magnetoelectric coupling above room temperature in the Ba1.5Sr1.5-based system through Al and Cu co-substitution, altering this conventional wisdom. This doping strategy effectively modulates the magnetic anisotropy to stabilize the magnetoelectric phase up to approximately 360 K while significantly enhancing the electric polarization. Furthermore, we demonstrate that the magnetoelectric states exhibit enhanced stability against external fields. Room-temperature magnetization modulation driven by an electric field is also observed. Our findings unlock the potential of the Ba-rich Z-type system and provide a broader compositional space for designing high-performance room-temperature multiferroics.

Article Details

Volume / Issue Vol. 129, Issue 6
Published August 10, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

H

Huantong Wu

School of Physics, Harbin Institute of Technology 1 , Harbin 150001,

J

Jun Li

F

Fuguang Han

School of Physics, Harbin Institute of Technology 1 , Harbin 150001,

D

Dongpeng Zhao

School of Physics, Harbin Institute of Technology 1 , Harbin 150001,

Z

Zeyang Zhang

S

Shuang Wang

D

Dengwei Yi

School of Physics, Harbin Institute of Technology 1 , Harbin 150001,

X

Xiping Chen

G

Guangai Sun

Key Laboratory for Neutron Physics of CAEP, Institute of Nuclear Physics and Chemistry 3 , Mianyang 621999,

Z

Zhongxiang Zhou

School of Physics, Harbin Institute of Technology 1 , Harbin 150001,