Reducing nonlinear effects in Kelvin probe force microscopy of back-gated 2D semiconductors

Abstract

In 2D field effect transistors, the gate electrostatically dopes the 2D semiconductor (2DSC) channel, tuning the Fermi level. In principle, Kelvin probe force microscopy (KPFM) can detect the Fermi level and its dependence on gate bias as well as position, potentially directly yielding bandgaps, contact barriers, spatial nonuniformities, and sub-gap densities of states in such devices. However, KPFM relies on an oscillating probe voltage, which itself electrostatically dopes the 2DSC, potentially creating a nonlinear response. Here, we show that when a suitably thin hexagonal boron nitride back-gate dielectric is used, the KPFM signal agrees well with expectations, as explained by a quasistatic charge-balance model. Corresponding experimental results are consistent with the literature values of the bandgaps of monolayer and trilayer WSe2. With this approach, the widely available technique of KPFM should find improved utility and new uses in the study of 2D devices.