Liu, X., Xu, R., Sun, N., Yao, J., Xu, T., Lu, J., Niu, T., Chen, D., Xie, Z., Ye, J., Xiu, X., Shi, Y., Zhang, R., Zheng, Y., Chen, P. (2026). 3.89-kV AlGaN/GaN Schottky barrier diodes on silicon substrate with BaTiO3 field plate termination. Applied Physics Letters. https://doi.org/10.1063/5.0309845