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High-fidelity numerical framework for crashworthiness evaluation of passenger car body structures under full-frontal impact

Temperature-dependent resistivity and Seebeck coefficient in epitaxial La0.5Sr0.5CoO3 thin film

La0.5Sr0.5CoO3 (LSCO55) thin film with a thickness of 13 nm was epitaxially grown on LaAlO3 (001) substrate by pulsed laser deposition. Its structural properties as well as its temperature-dependent electronic transport properties were investigated. X-ray diffraction confirmed single-phase “cube-on-cube” epitaxy with coherent in-plane strain. The film exhibits a low resistivity of ∼270 μΩ cm at 300 K and a quadratic temperature dependence below ∼200 K, indicating metallic behavior. The Seebeck coefficient shows two sign crossovers at ∼24 and ∼175 K with T3 dependence at low temperature. These findings demonstrate robust metallic transport in LSCO55 thin film and show that the thermoelectric response is not single-carrier-like: two Seebeck sign changes and a low-temperature dependence in T3 indicate competing carrier terms and a possible phonon drag contribution, shaped by magnetic ordering/disorder.

Comparative susceptibility of various pulses and their impact on the biological traits of pulse beetle, Callosobruchus chinensis (Linn.) (Coleoptera: Chrysomelidae)

Abstract Pulses play a significant role in Indian agriculture, contributing notably to the country’s economy through substantial export earnings. As the world’s leading producer of pulses, India benefits greatly from their cultivation. Pulses are rich in protein, containing 20 to 25 percent by weight, which is twice the protein content found in wheat and three times that of rice. Pulses are infested by many insect-pests during storage, however, pulse beetle, Callosobruchus chinensis is one of the major pest causing substantial losses in different pulses. Out of eight pulses investigated, pulse beetle completed its life cycle on all the pulses with varying time periods. Highest susceptibility index and adult emergence was found in case of green gram while lowest was in case of kidney bean. Talking about the damage and weight loss, it was maximum in case of green gram followed by chickpea while lowest was in case of horse gram and kidney bean. Pulse beetle also affected the germination potential of seeds of every pulse evaluated, however green gram, chickpea, kabuli chickpea and soybean were the most affected ones. Overall, green gram was ranked as most susceptible pulse while, kidney bean followed by horse gram was ranked as least susceptible pulse against C. chinensis . Therefore, concluding the study, green gram and chickpea were found to be most preferred host for C. chinensis and kidney bean and horse gram were least preferred hosts when compared on the basis of parameters like biology, grain damage, weight loss and germination.

Direct characterization of arbitrary multi-particle states with ancilla-only measurements

The measurement of unknown quantum states is crucial in quantum information science. Standard quantum state tomography can retrieve information regarding unknown quantum states. However, as the number of qubits increases, the measurement basis required for standard tomography increases exponentially. When we are only interested in partial information of the quantum state, such as coherence and entanglement, global state reconstruction is not necessary. Therefore, direct characterization schemes are required to obtain the information of interest without complete state tomography. In this Letter, we present a circuit scheme with ancilla-only measurements for the direct characterization of multi-particle states that requires only four projection probabilities, independent of the system size. Ancilla-only measurements refer to a strategy where all readouts are on ancillas, never directly on the target qubits. Target state information is indirectly extracted via target–ancilla coupling. Moreover, our scheme can automatically reset the target qubits, thereby providing an immediately available quantum register for subsequent tasks and avoiding the target quantum system initialization required for the next task. Finally, numerical simulations and experimental verification were performed on a quantum cloud platform, confirming the validity of the theoretical scheme.

Late Quaternary activities of the Xinbaoan–Shacheng fault in the North China Plain

Special topic on high-performance thin-film indoor photovoltaics

Interlinking professional skills, job satisfaction, and performance: a parallel mediation model of university counsellors

Spin–phonon coupling in two-dimensional antiferromagnet Fe0.25TaSe2

The coupling between phonon and spin gives rise to intriguing phenomena, including phonon Hall effect, spin Seebeck effect, and charge density wave (CDW). Here, we investigate spin–phonon coupling and CDW transition in antiferromagnetic intercalated Fe0.25TaSe2 using Raman spectroscopy. Fe intercalation introduces a new phonon mode: the spin–phonon mode (SPM) with two components, SPM1 and SPM2, stemming from vibration of the intercalated Fe atoms. Below the Néel temperature of 130 K, the position ratio of SPM1 and SPM2 modes exhibits anomalous change, and the linewidth of SPM2 broadens suddenly, demonstrating spin–phonon coupling mediated by the antiferromagnetic ordering. The two-phonon mode observed in Fe0.25TaSe2 attenuates rapidly at 170 K, notably higher than the CDW transition temperature in TaSe2 (T = 100 K), indicating the Fe intercalation benefits the CDW transition. In addition, the twisting mode in Fe0.25TaSe2 is significantly enhanced compared to that in TaSe2 and exhibits an unusual redshift and significant broadening in linewidth with decreasing temperature, indicating the intercalated Fe plays a “bridging” role, which gradually weakens as the temperature decreases. These findings provide valuable insights into electron–phonon–spin coupling in low-dimensional magnetic materials.

Green synthesized silver and zinc oxide nanoparticles with antifungal, DNA protection, DNA cleavage, and cytotoxic activities

Spatial single cell transcriptomic analysis informs tumor developmental hierarchy of DICER1 syndrome related sarcoma

Quantum geometry in correlated electron phases: From flatband to dispersive band

Quantum geometry, describing the geometric properties of the Bloch wave function in momentum space, has recently been recognized as a fundamental concept in condensed matter physics. The flatband system offers the paradigmatic platform where quantum geometry plays the essential role in correlated electron phases. However, systems that suffer from significant effects of quantum geometry are not limited to flatband systems; dispersive-band systems also exhibit quantum condensed phases driven by quantum geometry. In this perspective, we provide a transparent account of quantum geometry and its role in correlated electron phases throughout flatband and dispersive-band systems.

Leveraging remote sensing, geophysical methods and AHP model to determine optimal locations for green hydrogen production on Egypt’s Mediterranean coast

Abstract Global efforts to decarbonize energy systems have intensified the search for renewable alternatives due to reduce rapid climate change, green hydrogen is considered one of the best intriguing solutions. This research integrates remote sensing, GIS, analytic hierarchy process (AHP), and vertical electrical survey to identify optimal locations for production of green hydrogen along Egypt’s Mediterranean coast. Remote sensing and GIS provide spatial and environmental data on surface, AHP supports multi-criteria decision-making, and VES validates the results insights. The methodology employs eight critical parameters: distance to sea, slope, geology, land use/land cover, elevation, distance to roads, wind speed, and air temperature. These parameters were evaluated by utilizing analytic hierarchy process with a consistency ratio of 0.079 which confirms correctness of the weightage method. The resulting suitability map categorizes potential sites into four classes: least suitable, marginally suitable, moderately suitable, and most suitable, which represents 3.5% of the area. Analysis revealed that the northern part of Marsa Matruh represents the most favorable location for green hydrogen production. Additionally, a geoelectrical survey using eleven vertical electrical soundings (VESs) with Schlumberger configuration validated the surface findings and provided crucial subsurface information, suggesting dolomitic limestone as the optimal bedrock for facility construction which found at a depth ranging between 1.3 and 47 m with resistivity values ranging from 185.7 to 2251 Ω m. This study offers a thorough framework for the strategic advancement of green hydrogen production in Egypt, supporting the country’s sustainable energy transition goals.

Epitranscriptomic RNA editing resolves Mus81 DNA repair tradeoffs in heat tolerance and meiosis

Dual-function GaN QWD chip for real-time joint flexion and gesture recognition

GaN-based quantum well diodes (QWDs) exhibit the physical phenomenon of simultaneous emission and detection, offering a promising pathway toward compact, multifunctional optoelectronic platforms. We present a wearable joint flexion sensing system based on a dual-QWD chip operating at ∼460 nm. One QWD serves as a stable light emitter, while the other detects local optical field changes induced by joint bending. The chip is integrated onto a flexible printed circuit board and worn on the outer side of joints such as the elbow, wrist, and fingers, providing good skin compatibility and thermal safety. Optical signal variations are processed using a multilayer perceptron model to classify six hand gestures, including finger-count patterns and a clenched fist. A fivefold cross-validation confirms gesture recognition accuracies exceeding 97% across all categories. This work demonstrates a compact and reliable real-time gesture sensing method, underscoring the potential of GaN-based QWDs in next-generation wearable interactive systems.

Quantum free-electron laser oscillator

Abstract If the quantum mechanical recoil of the electron due to its scattering from the undulator and laser fields dominates the dynamics, a regime of the free-electron laser emerges where quantum effects lead to a drastic change in the radiation properties. However, the large interaction length required for a single-pass quantum free-electron laser impedes the experimental realization. The quantum free-electron laser oscillator, proposed in the present article, is a possible scheme to resolve this issue. Here we show that this device features a photon statistics that is closer to a coherent state in comparison to existing classical free-electron lasers. The device can be even operated in such a way that a sub-Poissonian statistics is obtained. Beside the benefit of demonstrating this pure quantum effect, the narrowing of the photon distribution implies reduced intensity fluctuations of the emitted radiation, which in turn lead to decreased noise in imaging experiments or to an enhanced sensitivity in interferometric applications.

Axial oxygen coordination drives spin-regulated electron transfer in single-atom Fe catalysts for selective pollutant transformation

Vertical diodes on n-type β-Ga2O3 using p-Cu2O for heterojunction formation and edge termination

Lack of viable p-type doping in ultra-wide bandgap β-Ga2O3 necessitates the use of p-type materials to form p–n heterojunction diodes (HJDs). This study demonstrates a comparative electrical performance analysis of vertical heterojunction devices using p-type Cu2O layers such as junction termination extension-Schottky barrier diodes (JTE-SBDs), p–n HJDs, and junction barrier Schottky diodes (JBSDs), along with control SBDs and SiO2 field plate (FP) SBDs. Through electrical characterization and TCAD simulations, we show that the JTE-SBD gives the best performance parameters with a 2.5× increase in breakdown voltage (Vbr = 656 V) with nearly matched differential specific on-resistance (Ron,sp = 1.73 mΩ cm2) compared to the control SBD due to improved edge electric field management, better than the FP-SBD and the JBSD, and without Ron,sp degradation observed in series resistance-limited HJD devices. The JTE-SBD demonstrates a Baliga's figure of merit of 0.24 GW/cm2. The near-unity ideality factors and low turn-on voltages of the p-Cu2O-based diodes further underscore its potential for enhancing β-Ga2O3 high-power diode performance, such as through effective edge electric field management shown through the JTE-SBDs in this work.

Retraction Note: Nutrient strengthening and lead alleviation in Brassica Napus L. by foliar ZnO and TiO2-NPs modulating antioxidant system, improving photosynthetic efficiency and reducing lead uptake

Tropical volcanism triggers pan-Asian monsoon droughts via circumglobal teleconnection

Characteristics of transport properties in double-barrier AlGaN/GaN HEMT with ultra-high density 2DEG and high breakdown voltage

In this work, double-barrier AlGaN/GaN high-electron-mobility transistors (DB-HEMTs) are investigated to simultaneously achieve ultra-high two-dimensional electron gas (2DEG) density and enhanced breakdown voltage. The device employs two AlGaN layers with different Al compositions, forming a main quantum well at the AlGaN/GaN interface and a sub-quantum well at the AlGaN/AlGaN interface. Technology computer aided design (TCAD) simulations indicate that the introduction of the sub-quantum well redistributes both the electric field and the carrier transport under high drain bias. Although the peak electric field in the DB-HEMT is comparable to that of a conventional single-barrier HEMT, the regions of highest electric field are spatially decoupled from the highest carrier concentration. This field–carrier decoupling spatially broadens the impact ionization region and suppresses the formation of a localized, self-sustained avalanche, resulting in an enhanced breakdown voltage. To validate the simulation results, we fabricated a DB-HEMT with a 2DEG density up to 2.58 × 1013 cm−2, an average sheet resistance as low as 268 Ω/sq, and a breakdown voltage exceeding 1.5 kV. The gate leakage is below 10 μA/mm at 120 °C and −5 V bias, showing good high-temperature stability. These results clarify the physical mechanism responsible for breakdown enhancement in double-barrier GaN HEMTs and provide a practical design strategy for high-voltage GaN power devices.