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Strain-induced multifunctional altermagnetism in a Janus material
Altermagnetism, an emerging magnetic phase exhibiting spin-polarized electronic bands and zero net magnetization, has attracted significant attention for next-generation spintronics. However, experimental realizations of such materials remain scarce, necessitating reliable methods for inducing phase transitions from conventional magnetic states. Here, we propose a strain-driven ferromagnetic-to-altermagnetic (FM-AM) phase transition in 1T Janus CrTeBr. Through spin symmetry analysis and first-principles calculations, we reveal that a tensile strain of approximately 2% triggers this transition. The resultant AM phase exhibits nonrelativistic spin splitting (127.3 meV) while preserving zero net magnetization, with the spin splitting, spontaneous electric polarization, and valley polarization highly tunable via stacking engineering. Our work provides an experimentally feasible pathway to realize altermagnetism and offers a general strategy applicable to other FM systems, accelerating development of this burgeoning field.
SegFormer-based segmentation approach for landscape planning and overhead remote sensing image analysis
Hemadyne: accordion-inspired perfusion for microphysiological systems
600 °C operation of MBE-enabled ScAlN/AlN/GaN FinHEMTs
We report Sc0.15Al0.85N/AlN/GaN fin high-electron-mobility transistors (FinHEMTs) with stable operation up to 600 °C, enabled by a nearly lattice-matched Sc0.15Al0.85N barrier grown by molecular beam epitaxy. The fin sidewalls provide additional electrostatic control, strengthening gate modulation and thereby reducing off-state current (Ioff) and gate leakage (IG), improving subthreshold swing (SS), and shifting the threshold voltage (VT) positively relative to planar devices. At room temperature, the FinHEMTs with a fin width (Wch) of 0.4 μm achieve an on/off current (Ion/Ioff) ratio of ∼107, an SS of ∼105 mV/dec, and an on-state current (Ion) of ∼330 mA/mm. The devices also exhibit strong thermal robustness, maintaining Ion of 110 mA/mm at a gate–source voltage (VGS) of 0 V and an Ion/Ioff ratio of 890 at 600 °C. These results establish ScAlN/AlN/GaN FinHEMTs as a promising platform for extreme-temperature electronics.
Efficient and metal catalyst-free approach towards highly-substituted N-sulfonylpiperidine-/mono-spiro-1,2,4,5-tetraoxanes for potential applications in chemotherapy
Abstract A highly efficient metal and catalyst-free approach for the preparation of synthetically challenged tri -OMe-aryl-substituted heterocyclic, di -/ tri -OMe-aryl-based cyclic and acyclic 1,2,4,5-tetraoxanes ( 5a–l and 6a–k ) is presented herein. Under green-chemistry conditions, the reactions occur in two key steps. The first one involves azeotropic activation of hydrogen peroxide for N -sulfonylpiperidone ( 2a–f ), substituted cyclic and acyclic ketones ( 2a 1 –a 4 ) oxidation, whereas the second one was H + [BF 4 ]ˉ (50–55% solun; 25 mol%)-catalyzed cyclization of the highly reactive gem -dihydroperoxide ( 3a–f and 3a 1 –a 4 ) intermediates in an SN 1 -type manner with secondary keto compounds ( 4a–d ). Both reactions furnished a diverse array of heterocyclic, cyclic, and open-chain 1,2,4,5-tetraoxane analogues ( 5a–l and 6a–k ; 19–83%) in attainable yields. The outcomes of the control and competition experiment strongly indicate that the electronic effects of the EWGs group and the strong steric influence of the bulky tri -OMe-aryl group directly impacted reaction advancement. These effects were clearly observed in the reactivity of the substituted N -sulfonylpiperidones ( 2a–f ) and gem -dihydroperoxides ( 3a–f and 3a 1 –a 4 ), and finally, also in the construction of the final products ( 5a–l and 6a–k ). In addition, this metal-free approach is also suitable for the ‘one pot’ synthesis of structurally complex, highly substituted, pharmaceutically privileged di -/ tri -OMe-aryl-based cyclic and acyclic 1,2,4,5-tetraoxanes ( 6a–h and 6k ), offering significant potential for synthetic advancements in malaria and cancer chemotherapy. Furthermore, in preliminary biological evaluations, the in vitro antiplasmodial and cytotoxic potentials of novel tri -OMe-aryl-substituted N -sulfonylpiperidine-spiro-1,2,4,5-tetraoxanes ( 5a–l ) were established against the chloroquine-resistant FcB1 strain of Plasmodium falciparum and human cancer cell lines, including HeLa and A2780 cells.
Durvalumab plus anlotinib versus durvalumab alone as maintenance treatment in extensive-stage small-cell lung cancer (DURABLE): a multicenter, randomized, phase II trial and biomarker analysis
Determination of intrinsic thermal expansion coefficient of VO2 film via interface engineering
The strong coupling between thermal and epitaxial strain in as-grown vanadium dioxide (VO2) thin films obscures the underlying physical mechanisms and impedes precise device control. Here, we circumvent epitaxial strain by fabricating a freestanding VO2 membrane and determine its intrinsic in-plane thermal expansion coefficient (TEC) as (5.3 ± 0.4) × 10−6 K−1 from 298 to 80 K using a noncontact optothermal Raman technique integrated with a three-substrate approach. By engineering the TEC mismatch at the material–substrate interface, we quantitatively analyze the resulting strain conditions and show that substantial compressive strain lowers the laser power threshold (Fth) for triggering metal–insulator transition (MIT) in the VO2 film. This work provides a general strategy to decouple thermal strain from epitaxial strain effects, enabling precise manipulation of phase transitions in correlated oxide films.
Perovskone, a potential antiprotozoal hit compound, quantification and derivatization
Excited-state intramolecular proton transfer luminogens regulated by competing dynamic covalent bonds and hydrogen bonds
Delta-doped diamond via <i>in situ</i> plasma-distance control
We present an approach to CVD diamond growth, in which the sample is placed at a defined distance from the reactor baseplate, to which the plasma couples. We observe two previously unknown growth regimes. In the first case, the sample is positioned within three to five millimeters of the plasma. This leads to a decreased growth rate, compared to a position inside the plasma and, additionally, to an increased nitrogen incorporation, allowing the fabrication of delta-doped layers with a thickness below 30 nm. In another regime, where the sample is positioned more than 10 mm away from the plasma, no growth is observed. Instead, we assume that a thin layer of nitrogen-rich species on the diamond surface is formed, which is incorporated during the growth of the following layer. This enables the fabrication of delta-doped layers with thicknesses below 10 nm. All doped layers show NV emission, with the intensity correlating with the nitrogen incorporation. The growth techniques could enable the fabrication of highly doped thin films for quantum sensing applications, as well as layers with low NV concentration, for quantum computing. The new approaches are not only applicable to nitrogen incorporation but also to other dopants such as phosphorus, which could open up new avenues for diamond-based electronics.
From genome to field, biocontrol efficacy of Bacillus subtilis strain M10 against Rhizoctonia solani in common bean
The V-ATPase/ATG16L1 axis drives membrane remodeling during epithelial morphogenesis
Metal-modulated epitaxy of ScAlN thin films and lattice-matched ScAlN/GaN superlattices
Scandium aluminum nitride (ScxAl1−xN) is attractive for novel quantum photonic applications due to the prospect of growing arbitrarily thick low-defect ScxAl1−xN/GaN heterostructures on c-plane GaN. While high-quality GaN growth by molecular-beam epitaxy (MBE) is performed under metal-rich conditions at substrate temperatures &gt;700 °C, ScxAl1−xN undergoes phase segregation and roughening under these conditions. For this reason, MBE of Sc-containing nitrides has been typically done under nitrogen-rich conditions at relatively low substrate temperatures (&lt;600 °C). We demonstrate a metal-modulated epitaxy method for ScxAl1−xN growth under metal-rich conditions that produces smooth ScxAl1−xN layers and ScxAl1−xN/GaN superlattices (SLs) with enhanced structural quality. In our approach, metal and nitrogen shutters are precisely timed to maintain approximately one monolayer (ML) of metal adlayer during the majority of ScxAl1−xN growth while preventing excessive metal buildup on the surface in each ∼1 nm cycle. This approach is especially beneficial for ScxAl1−xN/GaN SLs with ultrathin GaN quantum wells that require near-ML control of interface abruptness to limit intermixing and roughness that undermine optical or electronic properties. Using this metal-modulated approach at 600 °C, interface root mean square roughness in a 6 nm Sc0.14Al0.86N/2 nm GaN SL is kept below 0.1 nm, and interface widths are improved substantially relative to SLs grown under nitrogen-rich conditions at the same temperature.
In Vivo Base Editing of <i>PCSK9</i> with VERVE-102 for Hypercholesterolemia
Techno-economic analysis of bioactive-rich oil production from Nannochloropsis oculata
DNA viruses are constrained to ecological niches and share similar environmental adaptations with hosts
Electrochemically Assembled π–π Stacking Organic Radical‐Decatungstate With UV‐SWIR Solar Absorption for Efficiency Solar‐Thermal Conversion
ABSTRACT Solar‐driven interfacial photothermal evaporation is a promising approach for desalination; however, its efficiency is often constrained by the narrow absorption range and relatively low photothermal conversion efficiency of existing photothermal materials. Here, we report a large‑anion‐stabilized radical π‐aggregate strategy to construct a stable organic radical‐decatungstate hybrid via mild and controllable electro‑oxidation. The resulting material exhibits full‑spectrum solar absorption with a high solar absorptivity of 95.85% and achieves a photothermal conversion efficiency of 98.24%. When fabricated into a 2D solar steam evaporator, it delivers a net evaporation rate of 1.40 kg·m −2 ·h −1 , approaching the theoretical limit. Further integration into a 3D solar steam evaporator enables long‑term and reliable seawater desalination without salt precipitation. Theoretical calculations reveal that the ultrabroad and intense absorption originates from organic radical π‑aggregates and inorganic polyanion‑synergized intermolecular and intramolecular transfer transitions. This work integrates electrochemical radical generation with the structural advantages of polyoxometalates (POMs) to create a low‐cost, stable, and full‑spectrum photothermal material, opening a new avenue toward efficient and sustainable solar‑driven desalination.
Design of finite impulse response filter based on single-layer CoPt spin–orbit torque devices
Signal processing often suffers from high energy consumption and limited speed due to the separation of data storage and computation in conventional electronic systems. To harness the full potential of spin–orbit torque (SOT) devices in real-time temporal signal processing, this paper proposes a SOT-based signal processing scheme. By exploiting the multistate resistance characteristics of SOT devices and their intrinsic alignment with convolution algorithms, we develop a synergistic framework for finite impulse response (FIR) filtering circuits. A multi-channel SOT convolution kernel circuit simulation model is further constructed, which exhibits outstanding performance in denoising tasks—ranging from simple sinusoidal signals to complex speech signals. Based on this model, we implement a hardware FIR filter using CoPt-SOT devices, with experimental measurements closely matching simulation results (sinusoidal signal: SNR = 18.84 dB; speech signal: SNR = 10.29 dB). Frequency-domain analysis further confirms that the filter preserves low-frequency information while suppressing high-frequency noise. This work not only advances the application of SOT devices in neural network hardware and real-time signal processing systems but also underscores their promise for next-generation high-efficiency computing architectures.
Design of a robust neural network-based controller for frequency stability in microgrids
Abstract The utilization of renewable energy sources (RESs), including solar and wind, in microgrids (MGs) present a critical challenge for maintaining system stability, mostly because of the elimination of mechanical inertia traditionally provided by synchronous generators. This study presents a controlling technique to guard disturbances in the islanded MG. To address this challenge, a multi-layer feedforward neural network (MLFFNN) is used to enhance the frequency stability of an islanded MG. The MLFFNN controller is compared to traditional controllers such as proportional-integral-derivative-acceleration (PIDA), proportional-integral-derivative (PID) and virtual inertia (VI) to evaluate its performance and effectiveness. Three scenarios are studied: load variations, RES fluctuations, and a combined case including both load variations and RES variability. A comparative study between VI, PID, PIDA, and MLFFNN controllers has been carried out, and shows that the MLFFNN combined with the VI controller is better than VI, PID, PIDA and MLFFNN controllers in all cases. Compared with the uncontrolled system, the MLFFNN with VI reduced the maximum frequency deviation from 4.92 to 3.86× $$\:{10}^{-5}$$ Hz in the third case. Finally, the MLFFNN combined with the VI controller provided better performance for frequency stability.