Applied Physics Letters

Zintl-phase Mg3Sb2 as an emerging infrared photodetector material on silicon

N Nozomu Kiridoshi (Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,) A Akito Ayukawa (Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,) K Koki Nejo (Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,) T Takeru Kuriyama (Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,) R Ryosuke Kobayashi W Wakaba Yamamoto (JEOL Ltd 2 , 3-1-2 Musashino, Akishima City, Tokyo 196-8558,) A Akira Yasuhara (JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan) K Kohei Sato (JEOL Ltd 2 , 3-1-2 Musashino, Akishima City, Tokyo 196-8558,) H Haruhiko Udono (Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,) S Shunya Sakane (Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,)

Abstract

Infrared (IR) photodetectors integrated on Si are in critical demand for Internet of Things (IoT) and AI applications. We repositioned the Zintl-phase compound Mg3Sb2, widely known as a high-performance thermoelectric material, as a candidate for Si-integrated optoelectronics. We demonstrate the first epitaxial growth of Mg3Sb2 thin films on Si(001) substrates, revealing a unique c axis orientation with four threefold symmetric domains. A p–n heterojunction formed between p-type Mg3Sb2 and n-type Si exhibited clear rectification. Crucially, the device demonstrated a distinct photoresponse to short-wavelength infrared light (1450 and 1600 nm), where we obtained spectral sensitivity spectra and confirmed a linear dependence of the photocurrent on the incident power at infrared wavelengths. This work unveils Mg3Sb2's untapped optoelectronic properties, establishing Mg3Sb2/Si as a promising platform for IR photodetectors.

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Article Details

Volume / Issue Vol. 128, Issue 6
Published February 09, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics
ISSN: 0003-6951 Physical Sciences

Authors (10)

N

Nozomu Kiridoshi

Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,

A

Akito Ayukawa

Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,

K

Koki Nejo

Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,

T

Takeru Kuriyama

Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,

R

Ryosuke Kobayashi

W

Wakaba Yamamoto

JEOL Ltd 2 , 3-1-2 Musashino, Akishima City, Tokyo 196-8558,

A

Akira Yasuhara

JEOL Ltd., 3-1-2 Musashino, Akishima, Tokyo 196-8558, Japan

K

Kohei Sato

JEOL Ltd 2 , 3-1-2 Musashino, Akishima City, Tokyo 196-8558,

H

Haruhiko Udono

Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,

S

Shunya Sakane

Graduate School of Science and Engineering, Ibaraki University 1 , 4-12-1 Nakanarusawa-cho, Hitachi City, Ibaraki 316-8511,

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