Wafer-scale epitaxial growth of AlN (0001) on heteroepitaxial diamond (111)
Abstract
Wurtzite-type aluminum nitride (AlN) films were deposited by magnetron sputtering epitaxy (MSE) on wafer-scale diamond layers, which in turn were grown heteroepitaxially by plasma-enhanced chemical vapor deposition applying bias-enhanced nucleation on an Ir seed layer. The seed was fabricated on Si (111) wafers with an yttria-stabilized zirconia buffer layer by MSE. Analysis by x-ray diffraction has confirmed fully epitaxial growth throughout the entire stack. Due to diamond's high thermal conductivity, which makes it an effective heat sink, this stack constitutes an important step toward monolithically integrated high-efficiency III-nitride-diamond power electronics.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (10)
Jürgen Weippert
Fraunhofer Institute for Applied Solid State Physics IAF 1 , Tullastr. 72, D-79108 Freiburg,
Balasubramanian Sundarapandian
Fraunhofer Institute for Applied Solid State Physics IAF 1 , Tullastr. 72, D-79108 Freiburg,
Mohit Raghuwanshi
Fraunhofer Institute for Applied Solid State Physics IAF 1 , Tullastr. 72, D-79108 Freiburg,
Mario Prescher
Fraunhofer Institute for Applied Solid State Physics IAF , 79108 Freiburg,
Lutz Kirste
Fraunhofer Institute for Applied Solid State Physics IAF , 79108 Freiburg,
Tobias Fehrenbach
Diamond Materials GmbH 3 , Hans-Bunte-Str. 19, D-79108 Freiburg,
Christoph Wild
Diamond Materials GmbH 3 , Hans-Bunte-Str. 19, D-79108 Freiburg,
Jan Kustermann
Fraunhofer Institute for Applied Solid State Physics IAF 1 , Tullastr. 72, D-79108 Freiburg,
Jan Engels
Fraunhofer Institute for Applied Solid State Physics IAF 1 , Tullastr. 72, D-79108 Freiburg,
Vadim Lebedev
Fraunhofer Institute for Applied Solid State Physics IAF 1 , Tullastr. 72, D-79108 Freiburg,