Voltage control spin mixing conductance in TMDCs/ferromagnet heterostructures

Q Qi Lu (State Key Laboratory of Chemical Engineering, Department of Chemical Engineering) Z Zeqi Lin (State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University , Xi'an 710049,) L Liwen Liang (State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University , Xi'an 710049,) J Jiaqiang Liu (College of Chemistry Nankai University Tianjin China) Y Yuxuan Jiang (National Key Laboratory of Strength and Structural Integrity, Institute of Solid Mechanics, School of Aeronautic Science and Engineering, Beihang University) Y Yifan Wang B Bin Peng (Agroecosystem Sustainability Center, Institute for Sustainability, Energy, and Environment, University of Illinois Urbana-Champaign) Z Zhongqiang Hu (State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,) Z Zhiguang Wang M Ming Liu

Abstract

The efficiency of spin current generation and transmission is crucial for the performance of spin–orbit torque devices. Here, the spin mixing conductance serves as a pivotal parameter to quantify spin transport efficiency at ferromagnetic/nonmagnetic interfaces. To date, most studies have focused on optimizing the efficiency of spin current generation, while the modulation of interfacial spin transparency remains underexplored. In this work, we fabricate freestanding MoS2/NiFe heterostructures with intrinsically high spin mixing conductance surpassing conventional ferromagnetic systems by two orders of magnitude. Owing to the high tunability of the band structure in MoS2 with strain and charge doping, a 135% enhancement in the spin mixing conductance of MoS2/NiFe heterostructures has been achieved using PMN-PT ferroelectric single-crystal substrates. Our findings demonstrate a model for dynamically tuning spin transport at 2D/ferromagnetic interfaces and further provide foundational insight into the design of flexible, freestanding spintronic devices with ultralow power consumption and field-tunable functionality.

Article Details

Volume / Issue Vol. 127, Issue 11
Published September 15, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

Q

Qi Lu

State Key Laboratory of Chemical Engineering, Department of Chemical Engineering

Z

Zeqi Lin

State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University , Xi'an 710049,

L

Liwen Liang

State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, School of Electronic Science and Engineering, Xi'an Jiaotong University , Xi'an 710049,

J

Jiaqiang Liu

College of Chemistry Nankai University Tianjin China

Y

Yuxuan Jiang

National Key Laboratory of Strength and Structural Integrity, Institute of Solid Mechanics, School of Aeronautic Science and Engineering, Beihang University

Y

Yifan Wang

B

Bin Peng

Agroecosystem Sustainability Center, Institute for Sustainability, Energy, and Environment, University of Illinois Urbana-Champaign

Z

Zhongqiang Hu

State Key Laboratory for Manufacturing Systems Engineering, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education, Engineering Research Center of Spin Quantum Sensor Chips, Universities of Shaanxi Province, School of Electronic Science and Engineering, Xi'an Jiaotong University 1 , Xi'an 710049,

Z

Zhiguang Wang

M

Ming Liu