Volatile and nonvolatile resistive switching reconfiguration in CeO2-based memristor
Abstract
The era of big data and the rapid development of artificial intelligence pose urgent demand on reconfigurability of memristive devices. Here, we demonstrate that a Pt/CeO2/V memristor can exhibit both nonvolatile and volatile characteristics through voltage polarity control and operation sequence. Nonvolatile switching is obtained by applying a positive sweep followed by a negative sweep, whereas volatile switching arises from consecutive positive sweeps. Notably, the device shows excellent performance in both operation modes. As a nonvolatile memory, it exhibits low coefficient of variation of set/reset voltage (17%), robust retention time (∼105 s), and stable on/off ratio (∼10). As a volatile memory, it displays low operation voltage (∼0.9 V), ultrahigh uniformity (∼1%), and high selectivity over 102. It is supposed that these behaviors can be attributed to polarity-dependent filament dynamics: negative bias induces filament rupture in the CeO2 layer, while positive bias governs filament formation and rupture in the VOx layer. This study is helpful for the development of CeO2-based memristive devices with configurable functionalities.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (6)
Shuai Zhong
Lirou Su
Guangdong Institute of Intelligence Science and Technology 1 , Hengqin, Zhuhai, Guangdong 519031,
Yufeng Hu
State Key Laboratory of New Targets Discovery and Drug Development for Major Diseases, Gannan Innovation and Translational Medicine Research Institute, School of Pharmacy, First Affiliated Hospital, Gannan Medical University, Ganzhou, China (S.Z., M.H., S.T., J.Z., H.C., S.W., X. Zhou, X.C., Y.H., Z.S., L.B., H.Y., H. Liu, J. Wan, X.-J.Z., J.C., Z.-G.S., X. Zhang, H. Li).
Guangyu Li
State Key Laboratory of Organic–Inorganic Composites, College of Materials Science and Engineering
Xuemeng Fan
Yishu Zhang