Valley polarization and anomalous valley Hall effect in altermagnet Ti2Se2S with multipiezo properties

X Xin Hu W Weihang Zhao (State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi'an Jiaotong University 1 , Xi'an, Shaanxi 710049,) W Wenjun Xia H Hanbo Sun (State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University 1 , Xi'an, Shaanxi 710049,) C Chao Wu Y Yin-Zhong Wu (School of Physical Science and Technology, Suzhou University of Science and Technology 2 , Suzhou 215009,) P Ping Li

Abstract

Recently, altermagnets demonstrate numerous unique physical phenomena due to their inherent antiferromagnetic coupling and spontaneous spin splitting, which are anticipated to enable innovative spintronic devices. However, the rare two-dimensional altermagnets have been reported, making it difficult to meet the requirements for high-performance spintronic devices on account of the growth big data. Here, we predict a stable monolayer Ti2Se2S with out-of-plane altermagnetic ground state and giant valley splitting. The electronic properties of altermagnet Ti2Se2S are highly dependent on the onsite electron correlation. Through symmetry analysis, we find that the valleys of X and Y points are protected by the mirror Mxy symmetry rather than the time-reversal symmetry. Therefore, the multipiezo effect, including piezovalley and piezomagnetism, can be induced by the uniaxial strain. The total valley splitting of monolayer Ti2Se2S can be as high as ∼500 meV. More interestingly, the direction of valley polarization can be effectively tuned by the uniaxial strain; based on this, we have defined logical 0, +1, and −1 states for data transmission and storage. In addition, we have designed a schematic diagram for observing the anomalous Hall effect in the experiment. Our findings have enriched the candidate materials of two-dimensional altermagnet for the ultra-fast and low power consumption device applications.

Article Details

Volume / Issue Vol. 127, Issue 1
Published July 07, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

X

Xin Hu

W

Weihang Zhao

State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum System, School of Materials Science and Engineering, Xi'an Jiaotong University 1 , Xi'an, Shaanxi 710049,

W

Wenjun Xia

H

Hanbo Sun

State Key Laboratory for Mechanical Behavior of Materials, School of Materials Science and Engineering, Xi'an Jiaotong University 1 , Xi'an, Shaanxi 710049,

C

Chao Wu

Y

Yin-Zhong Wu

School of Physical Science and Technology, Suzhou University of Science and Technology 2 , Suzhou 215009,

P

Ping Li