Unveiling bonding heterogeneity-driven anharmonicity and ultralow lattice thermal conductivity in NbSe2Br2: A machine learning accelerated discovery

Z Zihan Dong Y Yinglin Guan (School of Physics and Optoelectronic Engineering, Guangdong University of Technology 2 , Guangzhou 510006,) M Minru Wen (School of Physics and Optoelectronic Engineering, Guangdong University of Technology 2 , Guangzhou 510006,) L Le Huang

Abstract

Transition metal chalcogenide halide (TM–Ch–X) compounds with significant heterogeneity in their chemical bonding have immense potential for thermoelectric applications. Their mixed ionic–covalent bonding nature, combined with intrinsic low lattice symmetry, provides a favorable platform for achieving strong lattice anharmonicity and ultralow lattice thermal conductivity. In this work, we developed a temperature-included crystal graph convolutional neural network to accurately predict mode-resolved Grüneisen parameters, a key descriptor of lattice anharmonicity. Using this approach, two-dimensional NbSe2Br2 is identified as a thermoelectric candidate with strong anharmonicity and ultralow lattice thermal conductivity. First-principles results reveal that the strong anharmonic lattice dynamics originate from its weak and heterogeneous chemical bonding, further leading to ultralow lattice thermal conductivity. NbSe2Br2 also exhibits favorable electronic transport behavior, resulting in a maximum ZT of 1.63. Our work provides a theoretical understanding of the origin of low lattice thermal conductivity in TM–Ch–X compounds with bonding heterogeneity and should encourage further exploration of potential thermoelectric materials.

Article Details

Volume / Issue Vol. 128, Issue 2
Published January 12, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (4)

Z

Zihan Dong

Y

Yinglin Guan

School of Physics and Optoelectronic Engineering, Guangdong University of Technology 2 , Guangzhou 510006,

M

Minru Wen

School of Physics and Optoelectronic Engineering, Guangdong University of Technology 2 , Guangzhou 510006,

L

Le Huang