Unveiling and eliminating the parasitic hole loss in AlGaN-based deep-ultraviolet light-emitting diodes
Abstract
The parasitic hole loss during injection is experimentally unveiled in AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs), which is attributed to electron accumulation at the interface of active region and electron blocking layer. It is demonstrated that the loss arises mainly through the non-radiative recombination process, making it unnoticeable under normal operating conditions, e.g., at room temperature. A strategy of DUV-LEDs featuring the active region ending with a well layer is accordingly proposed to propel electron accumulation into the last quantum well. As a consequence, holes can be effectively injected into the wells without parasitic loss, where efficient radiative recombination for deep-ultraviolet emission occurs as hoped. The light output power is then enhanced by 23% at 100 mA in 277 nm DUV-LEDs. Meanwhile, the maximum wall-plug efficiency reaches 9.98% at 10 mA. The strategy in this study is compatible with the present commercial DUV-LED epitaxial structure, enabling it to promote further development of this field.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (17)
Chengzhi Ji
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,
Jiaming Wang
School of Life Sciences, Beijing University of Chinese Medicine
Jing Lang
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,
Fujun Xu
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,
Lisheng Zhang
College of Electromechanical Engineering Qingdao University of Science and Technology Qingdao 266061 China
Guoping Li
Frontier Institute of Science and Technology, Interdisciplinary Research Center of Frontier Science and Technology, State Key Laboratory for Strength and Vibration of Mechanical Structures, Institute of New Concept Sensors and Molecular Materials, Shaanxi Key Laboratory of New Conceptual Sensors and Molecular Materials, Engineering Research Center of Key Materials for Efficient Utilization of Clean Energy of Shaanxi Province, Xi’an Key Laboratory of Electronic Devices and Material Chemistry
Shuaiyu Chen
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,
Chen Ji
From the Warwick Medical School, Clinical Trials Unit, University of Warwick (K.C., C.J., J.P.N., J.B.L., J.M.M., F.M., C.N., H.N., A.-M.S., M.A.S., K.R.S., S.W., R.L., G.D.P.), and the Critical Care Unit, University Hospital Coventry and Warwickshire NHS Trust (M.A.S.), Coventry, Devon Air Ambulance (N.L., B.T.) and South Western Ambulance Service NHS Foundation Trust (R.O., S.W.), Exeter, East Midlands Ambulance Service NHS Trust, Nottingham (R.E.S.S., G.L.S., G.A.W.), East of England Ambulance Service NHS Trust, Cambridge (S.B., T.F.), Kingston University (T.Q.) and London Ambulance Service NHS Trust (R.T.F., J.K., J.F., A.M.-S.), London, North East Ambulance Service NHS Foundation Trust, Newcastle upon Tyne (K.C., E.B., M.L.), North West Ambulance Service NHS Trust, Bolton (S.B., A. Wright, M.W.), South Central Ambulance Service NHS Foundation Trust, Bicester (C.D.D., M.B., A.C., V.D.), South East Coast Ambulance Service NHS Foundation Trust, Crawley (G.B., J.W.), Welsh Ambulance Services University NH...
Junchuan Zhang
He Xu
Xiangning Kang
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, Nano-optoelectronics Frontier Center of Ministry of Education, School of Physics, Peking University 1 , Beijing 100871,
Zhixin Qin
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University 1 , Beijing 100871,
Xuelin Yang
Ning Tang
Xinqiang Wang
Department of Epidemiology and Biostatistics, School of Public Health, Tongji Medical College, Huazhong University of Science and Technology
Weikun Ge
Bo Shen
Department of Chemistry