Unraveling weak interfacial coupling in NaCl/WSe2 heterostructures

P Peng-Cheng Pan (Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University , Changsha 410082,) S Sheng-Yi Xie (Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University , Changsha 410082,) Y Yanlin Tao (Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) Y Yulong Zeng (Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University , Changsha 410082,) Y Yuan Tian L Long-Jing Yin (Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,) L Lijie Zhang L Li Zhang Z Zhihui Qin

Abstract

Resolving and controlling interfacial coupling between transition metal dichalcogenides and dielectric layer in heterostructures are of great importance in various physical phenomena. Here, we established the monolayer sodium chloride (NaCl) epitaxially grown on the monolayer tungsten selenide (WSe2) underlayer and demonstrated weak covalent-like quasi-bonding in the heterostructure. By using scanning tunneling microscopy, we observed the template effect of WSe2 lattices on NaCl epitaxy, with the edge of NaCl islands extending along three highly symmetric orientations of WSe2. NaCl islands also exhibited lower apparent height compared to WSe2 monolayers at various biases, which could be attributed to the almost unaffected electrostatic screening of NaCl within the weak interfacial coupling regime. Thermal stability experiments showed that the coupling strength of the NaCl/WSe2 interface is stronger than that of NaCl on Au(111) due to the extra quasi-bonding. Density functional theory calculations further verified the experimental observations and unveiled that the fundamental nature of interfacial coupling could arise from weak covalent-like quasi-bonding between Na+ ions and Se atoms accompanied by electron accumulation.

Article Details

Volume / Issue Vol. 126, Issue 23
Published June 09, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

P

Peng-Cheng Pan

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University , Changsha 410082,

S

Sheng-Yi Xie

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University , Changsha 410082,

Y

Yanlin Tao

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

Y

Yulong Zeng

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University , Changsha 410082,

Y

Yuan Tian

L

Long-Jing Yin

Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education & Hunan Provincial Key Laboratory of Low-Dimensional Structural Physics and Devices, School of Physics and Electronics, Hunan University 1 , Changsha 410082,

L

Lijie Zhang

L

Li Zhang

Z

Zhihui Qin