Unraveling the highly anisotropic optoelectronic, mechanical, and piezoelectric properties of monolayer SbP3

X Xiaoyu Huang C Chun-Yao Niu (International Laboratory for Quantum Functional Materials of Henan, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University 2 , Zhengzhou 450001,) Y Yongsong Luo J Jinbing Cheng (Henan International Joint Laboratory of MXene Materials Microstructure Nanyang Normal University Nanyang Henan P. R. China) P Peng Bi Z Zongjin Hu (College of science, University of Shanghai for Science and Technology 4 , Shanghai 200093,) Q Qiang Zhang Y Yu Jia

Abstract

Low-symmetry, non-centrosymmetric two-dimensional materials offer a promising basis for applications in multifunctional nanoelectronic devices. In this study, we utilize density functional theory calculations coupled with particle swarm optimization to design a monolayer polymorph of SbP3 that exhibits monoclinic Pc symmetry and good stability (M-SbP3). M-SbP3 demonstrates excellent phonon-limited electron mobility of 3525 cm2 V−1 s−1 at room temperature, with an ultrahigh anisotropy ratio of 108, which is four times the previously reported maximum value. Additionally, its optical absorption anisotropy ratio, reaching up to 13.3, is greater than that of most known two-dimensional low-symmetry materials. Due to the high anisotropy of the Young's modulus, the in-plane and out-of-plane Poisson ratios can achieve positive values of 1.29 and 1.91, as well as negative values of −0.43 and −0.88. Furthermore, our results reveal two opposite piezoelectric responses in M-SbP3, with significant in-plane piezoelectric coefficients of up to 50.5 × 10−10 and −86.6 × 10−10 C/m, respectively. These responses are primarily influenced by the clamped-ion term and may be associated with the high anisotropy of the electronic structure. Moreover, the electrical auxetic effects are a natural consequence of the high anisotropic piezoelectric responses. The highly anisotropic optoelectronic, mechanical, and piezoelectric properties, along with the coexisting mechanical and electrical auxetic effects, make M-SbP3 a promising component for multifunctional nanoelectronic devices.

Article Details

Volume / Issue Vol. 126, Issue 10
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

X

Xiaoyu Huang

C

Chun-Yao Niu

International Laboratory for Quantum Functional Materials of Henan, School of Physics and Laboratory of Zhongyuan Light, Zhengzhou University 2 , Zhengzhou 450001,

Y

Yongsong Luo

J

Jinbing Cheng

Henan International Joint Laboratory of MXene Materials Microstructure Nanyang Normal University Nanyang Henan P. R. China

P

Peng Bi

Z

Zongjin Hu

College of science, University of Shanghai for Science and Technology 4 , Shanghai 200093,

Q

Qiang Zhang

Y

Yu Jia