Universal scaling of electrostatic effects of a curved counter-electrode on the emitter field enhancement

T Thiago A. de Assis (Institute of Physics, Universidade Federal da Bahia 5 , Campus Universitário da Federação, Rua Barão de Jeremoabo s/n, 40170-115, Salvador, Bahia,) F Fernando F. Dall'Agnol (Department of Exact Sciences and Education (CEE), Federal University of Santa Catarina, Campus of Blumenau, Rua João Pessoa 4 , 2514, Velha, Blumenau 89036-004, Santa Catarina,)

Abstract

Experiments on field electron emission from single-tip nanoemitters have typically been carried out using a counter-electrode with a finite curvature radius R, positioned at a distance dgap from the emitter's apex. The effects of the counter-electrode's curvature on the apex field enhancement factor (γCa) of the emitter are still not understood. In this Letter, we theoretically explore how the apex field enhancement factor of an emitter, represented by a hemisphere on a cylindrical post (HCP) with apex radius ra=50 nm, is influenced by the curvature of a sphere-shaped counter-electrode. Importantly, our results show that for HCPs with sharpness aspect ratios typically between 102 and 103, there is a universal scaling such that γCa=γPaΨ(R/dgap), where γPa represents the apex field enhancement factor for the emitter assuming a planar counter-electrode, and Ψ(R/dgap) is a universal scaling function such that Ψ∼1 for R/dgap≫1 and Ψ∼(R/dgap)α, with α close to unity, for R/dgap≪1. These findings help partially explain discrepancies observed in orthodox field electron emission experiments, where it was reported that the effective γCa values extracted from the current–voltage characteristics of single-tip carbon nanotubes typically underestimate the theoretical γPa values when R∼dgap≫ra, a trend that is predicted by our results.

Article Details

Volume / Issue Vol. 126, Issue 6
Published February 10, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (2)

T

Thiago A. de Assis

Institute of Physics, Universidade Federal da Bahia 5 , Campus Universitário da Federação, Rua Barão de Jeremoabo s/n, 40170-115, Salvador, Bahia,

F

Fernando F. Dall'Agnol

Department of Exact Sciences and Education (CEE), Federal University of Santa Catarina, Campus of Blumenau, Rua João Pessoa 4 , 2514, Velha, Blumenau 89036-004, Santa Catarina,