Uncovering the modest hole mobility for the intrinsic single crystal CsPbBr3 by variable-temperature time of flight measurement
Abstract
CsPbBr3 single crystal is a promising candidate for room temperature radiation detector. However, the experimental mobilities reported exhibit considerable discrepancy, ranging widely from 10 to 4500 cm2/(V · s) at room temperature. Here, vertical Bridgman grown CsPbBr3 single crystal has been used to measure the mobility accurately using pulse-biased time-of-flight method. The hole mobility for CsPbBr3 at room temperature is modest to be around 25 cm2/(V · s). The value of the corresponding power-law index n for hole mobility on temperature (μ ∼ T-n) is around −1.23 in the range of 155–350 K, which is well consistent with the previous FET and Hall effect measurements, as well as theoretical calculations. The polar optical phonon rather than acoustic phonon is confirmed to be responsible for scattering carriers at room temperature. Our study gives solid evidence on the modest mobility in the intrinsic (not dominated by defects) CsPbBr3 semiconductor, which may limit the application of CsPbBr3 in high flux photon counting detectors.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (14)
Hao Yan
Gang Cao
Junqiang Wang
Chengqian Zhong
School of Materials Science and Engineering, Shanghai University 1 , 333 Nanchen Road, Shanghai 200444,
Shaohan Wang
R&D Center for Novel Materials, Shanghai Institute of Ceramics, Chinese Academy of Sciences 2 , Shanghai 201899,
Juan Qin
Section of Cardio-Oncology & Immunology, Cardiovascular Research Institute, School of Medicine, University of California San Francisco (A.Z.M., A.G., C.J.K., P. Manandhar, A.C.S., R.A.B., J.Q., J.J.M.).
Fangxiong Tang
School of Materials Science and Engineering, Shanghai University 1 , 333 Nanchen Road, Shanghai 200444,
Minghao Cui
School of Materials Science and Engineering, Shanghai University 1 , 333 Nanchen Road, Shanghai 200444,
Yike Luo
School of Materials Science and Engineering, Shanghai University 1 , 333 Nanchen Road, Shanghai 200444,
Wenzhen Wang
Yan Zhu
Junfeng Chen
Run Xu
Department of Electronic Information Materials, School of Materials Science and Engineering, Shanghai University 3 , Shanghai 200444,
Linjun Wang
Hefei National Research Center for Physical Sciences at the Microscale