Ultralow lattice thermal conductivity and glass-like thermal transport induced by double stacking faults in monolayer MS2 (M = Mo, W)

H Haoran Wei W Weiwei Xu (State Key Laboratory and Institute of Elemento-Organic Chemistry, College of Chemistry) X Xin Jin X Xianyong Ding (Chongqing Normal University 2 College of Physics and Electronic Engineering, , Chongqing 401331,) L Li Shi Y Yuanhao Duan (Institute for Structure and Function & Department of Physics, Chongqing University 1 , Chongqing 400044,) X Xiaoliang Xiao (Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University 4 , Guangzhou 510006,) J Jing Fan R Rui Wang X Xiaozhi Wu (Institute for Structure and Function & Department of Physics, Chongqing University 1 , Chongqing 400044,)

Abstract

Ultralow lattice thermal conductivity (κL) is critical for enhancing thermoelectric efficiency and thermal barrier performance. Utilizing density functional theory and the unified theory, we systematically investigate the lattice dynamics and thermal transport properties in monolayer MS2 (M = Mo, W), containing two adjacent stacking faults (two-SFs). Compared to their intrinsic monolayers, we find that the two-SFs MoS2 possess a substantial suppression of κL. Microscopically, the order of reduction of κL mainly arises from the reduction of phonon group velocity and the significant enhancement of the three-phonon scattering rates, which originate from the combination of increased three-phonon scattering channels and hardened third-order interatomic force constants. The enhancement of three-phonon scattering channels is due to the closed acoustic–optical (a–o) gap in two-SFs MoS2. As temperature increases, two-SFs MoS2 exhibit hierarchical phonon thermal transport. Diffusons dominate thermal transport and break the conventional κL∝T−1 dependence, making κL display glass-like behavior. These insights may provide some perspectives for the potential applications of transition metal dichalcogenides in thermoelectric and micro/nanoelectronic devices, carry broad implications for phonon physics and thermal engineering in two-dimensional material systems, and reveal the regime of multimodal phonon transport generated by introducing periodic stacking faults.

Article Details

Volume / Issue Vol. 127, Issue 13
Published September 30, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

H

Haoran Wei

W

Weiwei Xu

State Key Laboratory and Institute of Elemento-Organic Chemistry, College of Chemistry

X

Xin Jin

X

Xianyong Ding

Chongqing Normal University 2 College of Physics and Electronic Engineering, , Chongqing 401331,

L

Li Shi

Y

Yuanhao Duan

Institute for Structure and Function & Department of Physics, Chongqing University 1 , Chongqing 400044,

X

Xiaoliang Xiao

Guangdong Basic Research Center of Excellence for Structure and Fundamental Interactions of Matter, Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, School of Physics, South China Normal University 4 , Guangzhou 510006,

J

Jing Fan

R

Rui Wang

X

Xiaozhi Wu

Institute for Structure and Function & Department of Physics, Chongqing University 1 , Chongqing 400044,