Ultrafast interfacial charge transfer regulation in organo-metal perovskites through bandgap engineering

Z Zongtao Huang (School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Institute for Frontier Physics and Advanced Instruments, Guangdong University of Technology , Guangzhou 510006,) N Nan Gong (School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Institute for Frontier Physics and Advanced Instruments, Guangdong University of Technology , Guangzhou 510006,) S Shijie Du (School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Institute for Frontier Physics and Advanced Instruments, Guangdong University of Technology , Guangzhou 510006,) W Wei Kong J Junpeng Deng (School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Institute for Frontier Physics and Advanced Instruments, Guangdong University of Technology , Guangzhou 510006,) B Bohong Zheng Y Yilun Zhao L Lin Ma

Abstract

Selecting suitable materials for electron transport layers and optimizing their electronic properties are crucial for enhancing the performance of organic light-emitting diode. However, the harsh deposition conditions and high costs associated with traditional charge transport layers indicate significant potential for further optimization. Herein, we investigate charge transfer at organic-perovskite heterojunctions and explore how bandgap engineering can be utilized to modulate interfacial charge dynamics. Using transient absorption and time-resolved photoluminescence spectroscopy, we demonstrate that charge transfer at the interface of organic-perovskite heterojunction can be regulated and enhanced by increasing the energy level offset, which is achieved through the adjustment of the halide ion ratio in the perovskite material. These findings provide insights into interfacial charge transfer mechanisms and confirm the feasibility of bandgap engineering as a strategy for tailoring charge-transfer properties in organic optoelectronic devices.

Article Details

Volume / Issue Vol. 126, Issue 10
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

Z

Zongtao Huang

School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Institute for Frontier Physics and Advanced Instruments, Guangdong University of Technology , Guangzhou 510006,

N

Nan Gong

School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Institute for Frontier Physics and Advanced Instruments, Guangdong University of Technology , Guangzhou 510006,

S

Shijie Du

School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Institute for Frontier Physics and Advanced Instruments, Guangdong University of Technology , Guangzhou 510006,

W

Wei Kong

J

Junpeng Deng

School of Physics and Optoelectronic Engineering, Guangdong Provincial Key Laboratory of Sensing Physics and System Integration Applications, Institute for Frontier Physics and Advanced Instruments, Guangdong University of Technology , Guangzhou 510006,

B

Bohong Zheng

Y

Yilun Zhao

L

Lin Ma