Ultra-low dark current photodetector based on two-dimensional CuCrP2S6 material

X Xin Cheng J Jiao Peng Y Yanan Cao Z Zhipeng Zhong J Jinhan Hu Q Qianyi Yang Y Yezhao Zhuang J Jianlu Wang J Junhao Chu (State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics) H Hai Huang

Abstract

Metal thiophosphates have recently emerged as promising two-dimensional (2D) materials for the next-generation photodetectors due to their unique physical and optoelectronic properties. Among them, CuCrP2S6 (CCPS) has shown strong potential for photodetection applications. In this study, we developed a photodetector based on CCPS nanoflakes. The optimized device, featuring a 3 μm channel length and a 60 nm CCPS layer, exhibited impressive optoelectronic performance, with a responsivity of 7 mA/W and a detectivity of 6 × 108 Jones for 450 nm light with the light intensity of 0.02 mW/mm2. The device achieved an exceptionally low dark current of ∼300 fA, surpassing other reported 2D layer-based photodetectors. The long-term stability of the photodetector was demonstrated through 1500 cyclic light pulses. Furthermore, a 3 × 3 array device was constructed, showcasing outstanding optical imaging capabilities and operational stability. These findings provide crucial experimental evidence supporting the future fabrication of large-scale, high performance, low power, and highly stable photodetector arrays.

Article Details

Volume / Issue Vol. 126, Issue 17
Published April 28, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

X

Xin Cheng

J

Jiao Peng

Y

Yanan Cao

Z

Zhipeng Zhong

J

Jinhan Hu

Q

Qianyi Yang

Y

Yezhao Zhuang

J

Jianlu Wang

J

Junhao Chu

State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics

H

Hai Huang