Two-dimensional WTe2/Cr3Te4 heterostructures with high current-induced magnetization switching ratio
Abstract
Two-dimensional (2D) magnetic materials have emerged as a promising platform for spintronic devices due to their ability to form van der Waals heterostructures with high-quality interfaces, circumventing the lattice-matching constraints of conventional materials. However, the relatively low switching efficiency (<60%) in spin–orbit torque (SOT) systems has limited the development of low-power spin devices based on 2D heterostructures. In this study, we synthesize 2D quasi-layered Cr3Te4 ferromagnets with strong perpendicular magnetic anisotropy via chemical vapor deposition method and investigate the SOT effect in WTe2/Cr3Te4 heterostructure through harmonic Hall measurements and current-induced magnetization switching. The heterostructure demonstrates a substantial damping-like effective field, reaching 800 Oe per 106 A cm−2 for spin-up and −480 Oe per 106 A cm−2 for spin-down configurations. Remarkably, current-induced magnetization reversal measurement reveals an unprecedented switching ratio of ∼90% with a low critical current density of 1.85 × 106 A cm−2, surpassing previously reported values in other 2D heterostructures. These findings not only deepen our understanding of efficient SOT switching mechanisms but also provide a critical step toward the realization of next-generation low-power spintronic devices.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (11)
Kun He
Bailing Li
Sumei Wu
School of Materials Science and Engineering, Dalian Jiaotong University 1 , Dalian 116028,
Chen Yi
Yingying Liu
Institute of Intelligent Machines, Hefei Institutes of Physical Science
Shaojun Liu
Di Wang
Ruixia Wu
Jia Li
Bo Li
Xidong Duan