Twist-angle-engineered ferroelectric vortex lattice in freestanding BaTiO3 bilayers

Y Yonglan Hou (School of Physics and Electronics, Hunan University of Science and Technology 1 , Xiangtan, 411201 Hunan,) J Jianwei Liang D Di Fan (College of Mathematics and Physics, Beijing University of Chemical Technology 1 , Beijing 100029,) H Hong Zhou (Shanghai Collaborative Innovation Center of Agri-Seeds, School of Agriculture and Biology, Shanghai Jiao Tong University) Q Qianyi Li (Center for Brain Science) Y Yi Zhang W Weijin Chen C Congbing Tan (School of Physics and Electronics, Hunan University of Science and Technology 1 , Xiangtan, 411201 Hunan,) Y Yue Zheng (State Key Laboratory of Marine Environmental Science, College of the Environment and Ecology, Xiamen University)

Abstract

Realizing isolated ferroelectric topological states is challenging, as polar vortices typically form continuous, coupled networks. Here, we demonstrate that tuning the twist angle (θ) in freestanding BaTiO3 bilayers resolves this issue. Leveraging flexoelectric coupling to moiré strain gradients, we map a twist-angle-dependent topological phase diagram using atomic-resolution scanning transmission electron microscopy, with piezoresponse force microscopy confirming the preserved macroscopic ferroelectric response. By modulating θ, the system evolves from diffuse half-vortices to ordered homochiral vortex lattices and ultimately to bound vortex–antivortex pairs. At an optimal angle of θ = 7°, the polar textures are structurally pinned at moiré saddle points (S-sites), stabilizing a long-range ordered array of homochiral vortices. Geometrically compartmentalized by surrounding AA/AB domains, these discrete vortices exhibit suppressed inter-vortex crosstalk. Ultimately, structural engineering via the twist angle provides a scalable platform for generating spatially isolated, weakly coupled topological units for individually addressable oxide nanoelectronics.

Article Details

Volume / Issue Vol. 129, Issue 1
Published July 06, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

Y

Yonglan Hou

School of Physics and Electronics, Hunan University of Science and Technology 1 , Xiangtan, 411201 Hunan,

J

Jianwei Liang

D

Di Fan

College of Mathematics and Physics, Beijing University of Chemical Technology 1 , Beijing 100029,

H

Hong Zhou

Shanghai Collaborative Innovation Center of Agri-Seeds, School of Agriculture and Biology, Shanghai Jiao Tong University

Q

Qianyi Li

Center for Brain Science

Y

Yi Zhang

W

Weijin Chen

C

Congbing Tan

School of Physics and Electronics, Hunan University of Science and Technology 1 , Xiangtan, 411201 Hunan,

Y

Yue Zheng

State Key Laboratory of Marine Environmental Science, College of the Environment and Ecology, Xiamen University