Tuning the interfacial transport behavior in a superconducting van der Waals heterostructure

S Shuangxing Zhu (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) H Hao Liu X Xiao-Fang Tang (School of Physics, Central South University 3 , Changsha, 410083 Hunan,) Q Qi-Yi Wu (School of Physics, Central South University 3 , Changsha, 410083 Hunan,) C Chen Zhang (Shenzhen Institute for Quantum Science and Engineering, Department of Chemistry, and Department of Physics) J Jiaxin Wu J Junning Mei (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) R Ruan Zhang (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) Y Ying Liu Y Yu Chen K Kenji Watanabe T Takashi Taniguchi X Xinghan Cai (National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University) J Jian-Qiao Meng (School of Physics, Central South University 3 , Changsha, 410083 Hunan,)

Abstract

The interaction between the metallic and superconducting components at the interface of superconductor–normal metal (S-N) systems enables a variety of quantum phenomena, including the Josephson effect, Andreev reflection, and proximity-induced superconductivity, which are of significant interest both theoretically and practically. Nevertheless, due to varying physical mechanisms, achieving and fine-tuning multiple such phenomena within a single S-N system continues to be a challenge. In this work, we employ NbSe2 and WTe2 to fabricate an S-N-S heterostructure. Below the superconducting transition temperature of NbSe2, two distinct resistance-temperature behaviors are observed: a continuous decrease in junction resistance with temperature decrease, indicative of the superconducting proximity effect and consistent with the BCS model, and an increase in resistance attributed to competition between Andreev reflection (AR) and normal reflection at a low-transparency interface, which can be suppressed by applying a small bias current or a magnetic field. Our results indicate the signature of the coexistence of proximity-induced superconductivity with AR in the measured S-N-S heterojunction, demonstrating the tunability of charge carrier transport behavior at the interface. This finding enhances our understanding of such systems and holds potential for the development of superconducting electronics, quantum computing, and energy harvesting technologies.

Article Details

Volume / Issue Vol. 126, Issue 5
Published February 03, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (14)

S

Shuangxing Zhu

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

H

Hao Liu

X

Xiao-Fang Tang

School of Physics, Central South University 3 , Changsha, 410083 Hunan,

Q

Qi-Yi Wu

School of Physics, Central South University 3 , Changsha, 410083 Hunan,

C

Chen Zhang

Shenzhen Institute for Quantum Science and Engineering, Department of Chemistry, and Department of Physics

J

Jiaxin Wu

J

Junning Mei

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

R

Ruan Zhang

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

Y

Ying Liu

Y

Yu Chen

K

Kenji Watanabe

T

Takashi Taniguchi

X

Xinghan Cai

National Key Laboratory of Advanced Micro and Nano Manufacture Technology, Shanghai Jiao Tong University

J

Jian-Qiao Meng

School of Physics, Central South University 3 , Changsha, 410083 Hunan,