Tuning of charge state and wavelength in InAs/GaAs quantum dots through p-i-p<b>+</b>-i-n heterostructure engineering

Abstract

We present a p-i-p+-i-n AlAs/GaAs heterostructure device that enables independent tuning of quantum dot (QD) charge states and emission wavelength, addressing a key challenge in quantum light source integration. Utilizing quantum tunneling and the quantum-confined Stark effect, this device achieves precise modulation of QD emission with asymmetric AlAs barriers facilitating hole injection while suppressing electron tunneling. Photoluminescence measurements confirm a broad wavelength tuning range (7 meV) and stabilization of the single-hole X+ state, with second-order correlation g2(0) = 0.042(2), validating single-photon purity. This platform offers robust control for spin-photon entanglement and quantum network applications, paving the way for scalable quantum technologies.