Tunable multiferroic properties of bilayer ScI2 via stacking engineering

Y Yaxin Pan (Joint Center for Theoretical Physics, Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, and Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,) C Chongze Wang (Department of Physics and Research Institute for Natural Science, Hanyang University 2 , 222 Wangsimni-ro, Seongdong-Ku, Seoul 04763,) S Shuyuan Liu F Fengzhu Ren (Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University 1 , Kaifeng 475004,) C Chang Liu B Bing Wang J Jun-Hyung Cho (Joint Center for Theoretical Physics, Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, and Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,)

Abstract

Two-dimensional (2D) bilayer ScI2 demonstrates tunable multiferroic properties, including magnetic coupling, ferroelectricity, and valley polarization, controlled through interlayer sliding and rotation. Our first-principles calculations reveal that the AA stacking configuration induces antiferromagnetic (AFM) interlayer coupling, while a 180° rotation (AA* stacking) results in ferromagnetic (FM) coupling. Interlayer coupling switches to FM in the AB and BA stackings, while the AB* and BA* configurations favor AFM coupling. In the aligned stackings (AA, AB, and BA), interlayer sliding from AA induces ferroelectricity due to orbital hybridization and charge redistribution, with the strongest response predicted in the AB and BA configurations. Additionally, spontaneous valley polarization emerges in the AB/BA and AB*/BA* stackings, driven by inversion symmetry breaking and spin–orbit coupling. These results highlight the tunability of multiferroic properties in bilayer ScI2, offering insights for the design of 2D multiferroic devices for spintronic, electronic, and valleytronic applications.

Article Details

Volume / Issue Vol. 127, Issue 22
Published December 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (7)

Y

Yaxin Pan

Joint Center for Theoretical Physics, Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, and Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,

C

Chongze Wang

Department of Physics and Research Institute for Natural Science, Hanyang University 2 , 222 Wangsimni-ro, Seongdong-Ku, Seoul 04763,

S

Shuyuan Liu

F

Fengzhu Ren

Joint Center for Theoretical Physics, School of Physics and Electronics, Henan University 1 , Kaifeng 475004,

C

Chang Liu

B

Bing Wang

J

Jun-Hyung Cho

Joint Center for Theoretical Physics, Institute for Computational Materials Science, Henan Key Laboratory of High Efficiency Energy Conversion Science and Technology, and Henan International Joint Laboratory of New Energy Materials and Devices, School of Physics and Electronics, Henan University , Kaifeng 475004,