Tunable d0 topological magnetic states in multiferroic monolayer In2NO2

Abstract

Achieving and manipulating robust topological magnetic states has been a focus in condensed matter physics and materials sciences, exhibiting great potentials in next-generation information storage. Here, the d0 topological magnetic states are demonstrated in multiferroic monolayer In2NO2, where the magnetism originates from the p-orbital. Due to the small magnetic moment and delocalization feature of d0 magnetism, the skyrmions exist under an out-of-plane magnetic field in the range of 1.0–5.0 T, persisting at temperatures up to 150 K. The bimerons are generated by applying an in-plane magnetic field. With increasing tensile strain, the density of both skyrmions and bimerons can be significantly increased in In2NO2. Moreover, by constructing the In2NO2/MoSe2 heterostructure, the ferroelectric switching on and off skyrmion phase is utilized for encoding binary states “0” and “1.” These findings enrich the material family with d0 topological magnetic states for developing topologically physical devices.