Topological Hall effect and magnetic domain walls in kagome ferrimagnetic HoMn6Sn6 single crystals

H Huai Zhang (National Key Laboratory of Earth System Numerical Modeling and Application) X Xinxing Xu B Bei Ding (Shanghai Key Laboratory for Antibody-Drug Conjugates with Innovative Target, National Key Laboratory of Innovative Immunotherapy, School of Chemistry and Chemical Engineering) Y Yu Zhu S Shaoqiang Su (Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 2 , Guangzhou 510006,) M Minghao Zheng D Desheng Wu (Quantum Science Center of Guangdong–Hong Kong–Macao Greater Bay Area (Guangdong) 3 , Shenzhen 548045,) X Xiaoming Zhang Z Zhipeng Hou J Junming Liu

Abstract

This study explores the distinctive physical properties of HoMn6Sn6 single crystal with a kagome lattice structure. The magnetic and electronic transport properties of this material exhibit strong dependence on both the rare-earth element R and the crystallographic orientation. We systematically investigate in-plane magnetism and electronic transport in HoMn6Sn6, revealing a temperature-induced spin reorientation. The observation of a topological Hall effect within the 100–300 K range provides evidence of non-collinear spin textures. These textures are identified as 180° and 360° magnetic domain walls through direct imaging using Lorentz transmission electron microscopy. Our results establish HoMn6Sn6 as a good candidate for investigating the interplay between magnetic domain walls and magnetoelectric transport properties of kagome magnetic materials.

Article Details

Volume / Issue Vol. 127, Issue 20
Published November 17, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

H

Huai Zhang

National Key Laboratory of Earth System Numerical Modeling and Application

X

Xinxing Xu

B

Bei Ding

Shanghai Key Laboratory for Antibody-Drug Conjugates with Innovative Target, National Key Laboratory of Innovative Immunotherapy, School of Chemistry and Chemical Engineering

Y

Yu Zhu

S

Shaoqiang Su

Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, Institute for Advanced Materials, South China Academy of Advanced Optoelectronics, South China Normal University 2 , Guangzhou 510006,

M

Minghao Zheng

D

Desheng Wu

Quantum Science Center of Guangdong–Hong Kong–Macao Greater Bay Area (Guangdong) 3 , Shenzhen 548045,

X

Xiaoming Zhang

Z

Zhipeng Hou

J

Junming Liu