Topological Dirac and chiral phonons in isotope-substituted single-layer and bilayer graphene

S Shuyi He (School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology 1 , Beijing 100081,) M Meng Liu H Hongyan Ji J Jingda Guo (School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology 1 , Beijing 100081,) Y Yu Zhang (Xiangya Hospital, Central South University Changsha China) J Jia-Tao Sun (School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology 1 , Beijing 100081,)

Abstract

Topological phonons have attracted widespread attention for low-dissipation thermal transport. Most studies have obtained the topological phonon dispersion and edge states in two-dimensional (2D) materials, with limited exploration of the physical mechanisms of interlayer interaction and isotope substitution. Symmetry constrained Dirac phonons (DP) and chiral phonons (CP), capable of inducing intriguing edge states, offer an excellent platform for exploring these issues. We investigate the topological DP and CP of single-layer and bilayer graphene with an analytical tight-binding model supplemented by first-principles calculations. CP dispersion strongly depends on isotope substitution in contrast to DP. Interestingly, the edge states of graphene nanoribbons induced by 2D topological DP and CP exhibit out-of-plane atomic vibrations and in-plane circularly polarized atomic vibrations, respectively. This model provides deeper insight into topological phonons in graphene and a wide range of 2D materials, promising low-dissipation thermal transport and robust phononic devices.

Article Details

Volume / Issue Vol. 127, Issue 22
Published December 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

S

Shuyi He

School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology 1 , Beijing 100081,

M

Meng Liu

H

Hongyan Ji

J

Jingda Guo

School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology 1 , Beijing 100081,

Y

Yu Zhang

Xiangya Hospital, Central South University Changsha China

J

Jia-Tao Sun

School of Integrated Circuits and Electronics, MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, Beijing Institute of Technology 1 , Beijing 100081,