Top-gated multifunctional MoS2/silicon-on-insulator heterojunction

L Liqiang Chen (State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,) B Boyuan Di (State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,) Y Yijia Jiang (State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,) Y Yuxiang Wang (Key Laboratory of Photochemical Conversion and Optoelectronic Materials & CAS-HKU Joint Laboratory on New Materials) S Shiwan Zou (State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,) J Jintian Li (State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,) Z Ziyi Dong Y Yuanbo Xie (State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,) H Haixin Chang Y Youwei Zhang W Wenfeng Zhang

Abstract

Van der Waals heterojunctions that combine materials with distinct properties enable the integration of multiple functionalities into a single device. Here, we demonstrate a top-gated n–n MoS2/silicon-on-insulator (SOI) heterojunction that can be configured into several operational modes: a thin-silicon channel transistor electrostatically modulated by a MoS2 secondary gate; a silicon channel phototransistor with a high responsivity of 64.1 A/W and a specific detectivity of 6.56 × 1012 Jones; an integrated diode-transistor showing a rectifying ratio approaching 104 and an on–off ratio up to 9600; and a self-powered photodiode featuring a fast response speed (rise/fall time of 3.2/3.6 μs). These results establish a pathway toward multifunctional electronic and optoelectronic integration using a simple commercial SOI platform.

Article Details

Volume / Issue Vol. 128, Issue 21
Published May 25, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

L

Liqiang Chen

State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,

B

Boyuan Di

State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,

Y

Yijia Jiang

State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,

Y

Yuxiang Wang

Key Laboratory of Photochemical Conversion and Optoelectronic Materials & CAS-HKU Joint Laboratory on New Materials

S

Shiwan Zou

State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,

J

Jintian Li

State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,

Z

Ziyi Dong

Y

Yuanbo Xie

State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology 1 , Wuhan 430074,

H

Haixin Chang

Y

Youwei Zhang

W

Wenfeng Zhang