Thermodynamic scaling of coercive field in ferroelectric films: Single-domain and multi-domain switching competition
Abstract
The scaling of the coercive field Ec with ferroelectric thickness d is critical to device miniaturization. Here, we integrate Thomas–Fermi screening self-consistently into the Landau–Ginzburg–Devonshire framework via Gauss's and Kirchhoff's laws, thereby treating depolarization without resorting to an empirical background dielectric constant. By linking the d1/2 scaling of equilibrium domain size to the energy barrier of 180° multi-domain (MD) switching, we perform a comparative analysis of the Gibbs free energies for single-domain (SD) and MD reversal pathways to determine the energetically favored mechanism. We show that above a critical thickness (∼36 nm for PbZr0.2Ti0.8O3) the MD route dominates and Ec ∝ d−1/2, and below it the SD path prevails, leading to a monotonic decrease in Ec with reduced thickness until it vanishes in the ultrathin limit. Our work provides a unified thermodynamic description of Ec scaling across all thickness regimes, serving as a predictive tool for assessing ultrathin ferroelectrics.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (8)
Dianchen Zhu
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Bo Li
Xingwang Zhang
Key Laboratory of Biomass Chemical Engineering of Ministry of Education, College of Chemical and Biological Engineering
Menglu Li
Xueze Wang
State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,
Huabo Yang
Ji Jiang
Zhigang Yin