Thermodynamic scaling of coercive field in ferroelectric films: Single-domain and multi-domain switching competition

D Dianchen Zhu (State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,) B Bo Li X Xingwang Zhang (Key Laboratory of Biomass Chemical Engineering of Ministry of Education, College of Chemical and Biological Engineering) M Menglu Li X Xueze Wang (State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,) H Huabo Yang J Ji Jiang Z Zhigang Yin

Abstract

The scaling of the coercive field Ec with ferroelectric thickness d is critical to device miniaturization. Here, we integrate Thomas–Fermi screening self-consistently into the Landau–Ginzburg–Devonshire framework via Gauss's and Kirchhoff's laws, thereby treating depolarization without resorting to an empirical background dielectric constant. By linking the d1/2 scaling of equilibrium domain size to the energy barrier of 180° multi-domain (MD) switching, we perform a comparative analysis of the Gibbs free energies for single-domain (SD) and MD reversal pathways to determine the energetically favored mechanism. We show that above a critical thickness (∼36 nm for PbZr0.2Ti0.8O3) the MD route dominates and Ec ∝ d−1/2, and below it the SD path prevails, leading to a monotonic decrease in Ec with reduced thickness until it vanishes in the ultrathin limit. Our work provides a unified thermodynamic description of Ec scaling across all thickness regimes, serving as a predictive tool for assessing ultrathin ferroelectrics.

Article Details

Volume / Issue Vol. 128, Issue 23
Published June 08, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (8)

D

Dianchen Zhu

State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,

B

Bo Li

X

Xingwang Zhang

Key Laboratory of Biomass Chemical Engineering of Ministry of Education, College of Chemical and Biological Engineering

M

Menglu Li

X

Xueze Wang

State Key Laboratory of Semiconductor Physics and Chip Technologies, Institute of Semiconductors, Chinese Academy of Sciences 1 , Beijing 100083,

H

Huabo Yang

J

Ji Jiang

Z

Zhigang Yin