Thermally stable GaN RF HEMTs on proton irradiated GaN substrates for low-noise applications
Abstract
In this study, proton irradiation is employed to fabricate semi-insulating GaN free-standing wafers with a sheet resistance of 5.9 × 107 Ω/sq. The mechanism for achieving semi-insulating GaN via proton irradiation is associated with the formation of a deep-level trap (EC-0.54 eV), which is tentatively attributed to nitrogen antisite-related defects (NGa). GaN-on-GaN high electron mobility transistors fabricated on the irradiated substrates exhibit stable operation over 300–375 K, with a minimum noise figure as low as 0.25 dB, with suppressed low-frequency noise characteristics. Additionally, the proton irradiation treatment GaN substrate also exhibits high volume production potential. This device is ideal for installation in harsh operational environments, such as satellite communication systems or outdoor base stations.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (16)
Kangkai Fan
College of Materials Science and Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration, Institute of Power Devices and AI Energy Monitoring Technology, Shenzhen University 1 , Shenzhen 518060,
ChengCheng Xu
Jiajun Han
Yiyang Li
Wolfson Catalysis Centre, Department of Chemistry
Bin Li
Zhian Huang
College of Materials Science and Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration, Institute of Power Devices and AI Energy Monitoring Technology, Shenzhen University 1 , Shenzhen 518060,
Haihong Wu
Shanghai Key Laboratory of Green Chemistry and Chemical Processes, State Key Laboratory of Petroleum Molecular & Process Engineering, School of Chemistry and Molecular Engineering
Zhixiang Zhong
Department of Chemistry, State Key Laboratory of Synthetic Chemistry, The University of Hong Kong, Pokfulam Road, Hong Kong SAR 999077, P. R. China
Jingting Luo
State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University 4 , Shenzhen 518060,
Jianbo Liang
Engineering Division of Physics and Electronics, Osaka Metropolitan University 5 , Osaka 558-8585,
Jun He
Hezhou Liu
Xun Luo
Hsien-Chin Chiu
Department of Electronic Engineering, Chang Gung University 6 , Taoyuan 333,
Junfa Mao
State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University 4 , Shenzhen 518060,
Xinke Liu
College of Materials Science and Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration, Institute of Power Devices and AI Energy Monitoring Technology, Shenzhen University 1 , Shenzhen 518060,