Theoretical roadmap for suppressing electrically induced spin decoherence in silicon T centers via dynamical decoupling

Abstract

Silicon T centers are highly promising for scalable quantum networks, yet the critical transition from optical pumping to practical electrical injection introduces severe decoherence challenges. Specifically, macroscopic charge transport generates aggressive itinerant carrier scattering and stochastic local electric field fluctuations, which drastically degrade the spin phase memory of the localized electron. To quantify and address this fundamental vulnerability, we develop a comprehensive open quantum system model to map these current-driven noise channels. Our dynamics simulations demonstrate that applying active dynamical decoupling sequences effectively filters the dominant low-frequency charge noise and successfully reverses the coherence collapse. Furthermore, we extract a universal engineering scaling law revealing that microwave control rates exceeding 50 MHz can sustain fault-tolerant single-qubit gate fidelities above 99% at high device brightness. This established theoretical framework provides a quantitative blueprint for realizing fully integrated, electrically driven optoelectronic quantum nodes.