Theoretical investigation on the phase diagram and electronic and optical properties of two-dimensional strained Si6H6 monolayer

Y Yanxue Zhang W Weiwei Gao (Aiiso Yufeng Li Family Department of Chemical and Nano Engineering, Shu and K.C. Chien and Peter Farrell Collaboratory) X Xiaoran Shi H Hongsheng Liu J Junfeng Gao (Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, China.)

Abstract

Two-dimensional materials exhibit unique properties due to enhanced many-body effects and quantum confinement. In this study, we investigate the dynamic stability, possible synthesis routes, and electronic and optical properties of the hydrogenated two-dimensional Kagome silicene (Si6H6) monolayer using first-principle calculations coupled with the GW-Bethe–Salpeter equations. The Ag(111) substrate is found to be suitable for synthesizing the S-Si6H6 monolayer, which can then be obtained through exfoliation technology. In addition, the S-Si6H6 monolayer is identified as a semiconductor (with an indirect bandgap) and exhibits high hole mobility of 345 cm2 V−1 s−1 and high exciton binding energy of 1.38 eV. Furthermore, the bandgap of S-Si6H6 can be effectively modulated by strain. This work offers theoretical insights into the experimental synthesis of this monolayer and provides a modulation strategy for its optoelectronic applications.

Article Details

Volume / Issue Vol. 127, Issue 2
Published July 14, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (5)

Y

Yanxue Zhang

W

Weiwei Gao

Aiiso Yufeng Li Family Department of Chemical and Nano Engineering, Shu and K.C. Chien and Peter Farrell Collaboratory

X

Xiaoran Shi

H

Hongsheng Liu

J

Junfeng Gao

Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian, China.