The origin of the uniaxial magnetic anisotropy in Fe/GaAs(100) system

Y Yu Yan B Bo Liu X Xianyang Lu J Junlin Wang S Sarnjeet S. Dhesi (Diamond Light Source, Magnetic Materials Group) I Iain G. Will (Spintronics and Nanodevice Laboratory, Department of Electronics, University of York 2 , York YO10 5DD,) V Vlado K. Lazarov J Jun Du (State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics) J Jing Wu R Rong Zhang (Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China) Y Yongbing Xu (National Key Laboratory of Spintronics, Nanjing University)

Abstract

Fe/GaAs is a prototype system of spin injection at room temperature. The interfacial strain and oriented bonds are both considered the origin of the Fe in-plane uniaxial magnetic anisotropy (UMA), which remains decisive. Here, by the x-ray magnetic circular dichroism (XMCD) and the vibrating sample magnetometer measurements, this study shows that in the Fe/Cr(t)/GaAs structure, the in-plane UMA of Fe originates from the chemical bonding between the Fe and the GaAs substrate by varying Cr thickness, t. The UMA drops as the Cr coverage increases, characterized by a decrease in the saturation field from 2400 to 57 Oe. The XMCD studies reveal that the Fe orbital moment, a signature of chemical bonds, decreases from 0.216 μB at Cr = 0 ML to 0.138 μB at Cr = 5 ML. The reduction of the Fe orbital moment and the UMA are qualitatively consistent, establishing a link between the UMA and the interfacial chemical bonds. The decreased UMA remains unchanged at t > 5 ML, above which Fe and GaAs are fully separated by a continuous Cr layer. Our findings provide clear experimental evidence that the UMA in the Fe/GaAs system originates from the oriented interface bonds, clarifying the UMA origin in this prototype system.

Article Details

Volume / Issue Vol. 126, Issue 9
Published March 01, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (11)

Y

Yu Yan

B

Bo Liu

X

Xianyang Lu

J

Junlin Wang

S

Sarnjeet S. Dhesi

Diamond Light Source, Magnetic Materials Group

I

Iain G. Will

Spintronics and Nanodevice Laboratory, Department of Electronics, University of York 2 , York YO10 5DD,

V

Vlado K. Lazarov

J

Jun Du

State Key Laboratory of Chemical Reaction Dynamics, Dalian Institute of Chemical Physics

J

Jing Wu

R

Rong Zhang

Department of Materials Science and Engineering, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong 999077, China

Y

Yongbing Xu

National Key Laboratory of Spintronics, Nanjing University