The <i>V</i>th shift mechanism in MIFIS FeFET: A field-driven perspective

Hao Xu; Saifei Dai; Xianzhou Shao; Min Liao; Zeqi Chen; Tao Hu; Runhao Han; Jia Yang; Yajing Ding; Yuanyuan Zhao; Xinpei Jia; Xiaoyu Ke; Xiaoqing Sun; Junshuai Chai; Xiaolei Wang; Wenwu Wang

doi:10.1063/5.0288684

The <i>V</i>th shift mechanism in MIFIS FeFET: A field-driven perspective

H Hao Xu S Saifei Dai (State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) , Beijing 100029,) X Xianzhou Shao (State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) , Beijing 100029,) M Min Liao Z Zeqi Chen (State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) , Beijing 100029,) T Tao Hu R Runhao Han (State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) , Beijing 100029,) J Jia Yang (Key Laboratory of Green Chemistry & Technology, Ministry of Education, College of Chemistry) Y Yajing Ding (State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) , Beijing 100029,) Y Yuanyuan Zhao (College of Chemistry) X Xinpei Jia (State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) , Beijing 100029,) X Xiaoyu Ke (State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) , Beijing 100029,) X Xiaoqing Sun J Junshuai Chai (State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) , Beijing 100029,) X Xiaolei Wang (State Key Laboratory of Natural Product Chemistry, College of Chemistry and Chemical Engineering) W Wenwu Wang (State Key Laboratory of Fabrication Technologies for Integrated Circuits, Institute of Microelectronics of the Chinese Academy of Sciences (IMECAS) , Beijing 100029,)

Abstract

Hafnium-based ferroelectric field-effect transistor (FeFET) has demonstrated potential for 3D NAND applications. By introduction of a gate interlayer (GIL), the metal–interlayer–ferroelectric–interlayer–semiconductor (MIFIS) FeFET overcomes the classical limitation imposed by the coercive field (Ec) and ferroelectric thickness (tFE), enabling an expanded memory window (MW). While existing models attribute the MW to polarization and trapped charges scaled by ferroelectric and GIL capacitances, the field-driven threshold voltage (Vth) shift mechanism remains unexplored. To bridge the gap, we propose a two-step load-line model by incorporating a threshold field (Eth)-driven Vth shift mechanism. In this framework, we treat the GIL as a tunnel-switch layer controlled by Eth instead of an ideal capacitor. Simulations capture the device behavior and reveal an analytical expression for MW prediction, demonstrating a direct dependence of MW on Ec and Eth. This work establishes a field-driven perspective, offering a viable paradigm for designing and operating MIFIS FeFET devices.

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Article Details

Journal Applied Physics Letters

Volume / Issue Vol. 127, Issue 16

Published October 20, 2025

DOI 10.1063/5.0288684

ISSN 0003-6951

Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (16)

H

Hao Xu

S

Saifei Dai