The impact of laser and growth rate on trap formation in conventional and laser-assisted MOCVD GaN

Abstract

A systematic deep-level transient and optical spectroscopy study indicated the relationship between trap concentrations and the growth rate of metal–organic chemical vapor deposition (MOCVD) GaN. The EC-0.57, EC-0.72, and EC-0.9 eV traps were generally insensitive to the growth rate, while the C-related EC-1.35 and EC-3.28 eV traps and the VGa- and/or C-related EC-2.6 eV trap increased monotonically over the growth rate. The C/VGa-related traps are also responsible for the doping compensation in high-growth-rate MOCVD GaN. The laser-assisted MOCVD displayed potential in suppressing trap formation without sacrificing the high growth rate, paving the way for future thick vertical GaN applications.