The Hall effect and localized transport
Abstract
Historically, in measurements of electron transport in disordered two-dimensional systems, an Arrhenius Hall carrier density has never been observed alongside an Arrhenius conductivity, when the Fermi level is below a mobility edge. This has long been an issue with respect to claiming observation of transport via activation to a mobility edge. In this work, an Arrhenius conductivity and Arrhenius Hall carrier density have been observed alongside one another in such a system. Measurements were made of a two-dimensional electron gas hosted in a gated GaAs/Al0.33Ga0.67As heterostructure. Furthermore, in the regime of Arrhenius conductivity and Arrhenius carrier density, the mobility is shown to be independent of the position of the Fermi level below the mobility edge. A transition between carrier density and mobility dominating the resistivity temperature dependence has been observed, as the Fermi level is varied.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (6)
Robert Carroll
London Centre for Nanotechnology, University College London 1 , 17-19 Gordon Street, London WC1H 0AH,
Gregory Auton
London Centre for Nanotechnology, University College London 1 , 17-19 Gordon Street, London WC1H 0AH,
Stuart N. Holmes
Department of Electronic and Electrical Engineering, University College London 2 , Torrington Place, London WC1E 7JE,
Chong Chen
Department of Thoracic Oncology, State Key Laboratory of Biotherapy and Cancer Center, West China Hospital, Sichuan University
David A. Ritchie
Michael Pepper
London Centre for Nanotechnology, University College London 1 , 17-19 Gordon Street, London WC1H 0AH,