The bulk photovoltaic effect in one-dimensional tellurium nanowires for self-powered broadband polarization-sensitive photodetection

Abstract

The bulk photovoltaic effect (BPVE) provides a promising route toward bias-free, high-efficiency photodetection, yet its realization in low-dimensional anisotropic semiconductors remains largely unexplored. Here, we report a pronounced intrinsic BPVE in one-dimensional tellurium (Te) nanowires and exploit it for self-powered photodetection. A photodetector based on a single Te nanowire exhibits broadband photoresponse from 405 to 1550 nm under zero external bias, with a responsivity of 5.9 mA/W, a detectivity of 1.85 × 1011 Jones at 1550 nm, a power of 0.01 mW/cm2, and a polarization anisotropy ratio (PAR) of up to 2.33 (1550 nm, 0.15 mW/cm2). Benefiting from its strong polarization sensitivity, the device further enables polarization-encoded optical communication and polarization-resolved photocurrent imaging without external bias. These results establish Te nanowires as a promising platform for self-powered and highly integrated polarization-sensitive optoelectronics.