The analysis of spin current source in current-induced switching of the magnetization in T-type magnetic structures
Abstract
The schemes for addressing the obstacle of field-free switching driven by spin–orbit torque (SOT) have aroused the interest of spintronic community, for their rich physical phenomena. Here, we utilized the in-plane CoFeB(→)/W/perpendicular CoFeB(↑) design, a magnetic structure of the so-named T-type, to achieve field-free switching in a series of samples with different thicknesses. Through the second-harmonic measurement and the loop-shift method, we get a high effective spin Hall angle ∼0.149 in a 1 nm thin W spacer, indicating that the ultrathin W heavy metal still has sufficient application potential, which can function as both a coupling spacer and a spin source layer. Furthermore, we demonstrate that ferromagnetic materials can also serve as a prominent spin source that facilitates SOT-driven magnetization switching, employing the spin anomalous Hall effect. This investigation contributes valuable insights for the design and integration of spintronic devices in the advancement of sophisticated microelectronics.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (14)
Shiqiang Liu
Beijing National Laboratory for Molecular Sciences, CAS Laboratory of Colloid and Interface and Thermodynamics, CAS Research/Education Centre for Excellence in Molecular Sciences, Centre for Carbon Neutral Chemistry
Caihua Wan
Jihao Xia
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences 4 , Beijing 100190,
Ran Zhang
Jiahui Li
Xiaohan Li
Fangshuo Gao
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences 1 , Beijing 100190,
Yingqian Xu
Aleksandr V. Davydenko
Institute of High Technologies and Advanced Materials, Far Eastern Federal University 3 , Vladivostok 690922,
Maksim E. Stebliy
Institute of High Technologies and Advanced Materials, Far Eastern Federal University 3 , Vladivostok 690922,
Alexey V. Ognev
Institute of High Technologies and Advanced Materials, Far Eastern Federal University 3 , Vladivostok 690922,
Alexander S. Samardak
Institute of High Technologies and Advanced Materials, Far Eastern Federal University 3 , Vladivostok 690922,
Guoqiang Yu
Xiufeng Han