Temperature-dependent Raman spectroscopic studies of AlN epi-films by metal-organic chemical vapor deposition

Y Yanlian Yang (CAS Key Laboratory of Biological Effects of Nanomaterials and Nanosafety, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology) M Manika Tun Nafisa (Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,) Z Zhe Chuan Feng (Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,) L Lianshan Wang (Research Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University 1 , Nanning 530004,) J Jeffrey Yiin (Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,) L Lingyu Wan B Benjamin Klein (Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,) I Ian T. Ferguson (Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,) W Wenhong Sun (Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, Guangxi University 1 , Nanning 530004,)

Abstract

Temperature-dependent Raman scattering measurements are performed over the range of 80–810 K, and an investigation is conducted on two AlN epitaxial films (1.8 and 3.7 μm) grown on sapphire by metal-organic chemical vapor deposition. Simulations are carried out for the AlN phonon modes of E2(high) by the space correlation model and A1(LO) by longitudinal optical phonon and plasma coupling over the range of 80–810 K. Temperature-dependent values of carrier concentration, electron mobility, crystalline perfection degrees, and biaxial stress along the film growth direction are acquired. Their graphical variations and formulized polynomial descriptions are presented. Different from traditional Hall and C–V electrical measurements, our method of using an optical technique for determining high-temperature carrier concentration and mobility along the epitaxial direction nondestructively may provide a useful method for the research and development of AlN and other semiconductors.

Article Details

Volume / Issue Vol. 127, Issue 16
Published October 20, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (9)

Y

Yanlian Yang

CAS Key Laboratory of Biological Effects of Nanomaterials and Nanosafety, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology

M

Manika Tun Nafisa

Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,

Z

Zhe Chuan Feng

Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,

L

Lianshan Wang

Research Center for Optoelectronics Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, School of Physical Science and Technology, Guangxi University 1 , Nanning 530004,

J

Jeffrey Yiin

Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,

L

Lingyu Wan

B

Benjamin Klein

Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,

I

Ian T. Ferguson

Southern Polytechnic College of Engineering and Engineering Technology, Kennesaw State University 2 , Marietta, Georgia 30060,

W

Wenhong Sun

Research Center for Optoelectronic Materials and Devices, Guangxi Key Laboratory for the Relativistic Astrophysics, Guangxi University 1 , Nanning 530004,