Temperature dependent characterization of 140–180 nm AlGaN/GaN HEMTs using DC and small-signal RF measurements
Abstract
We conducted comprehensive direct current (DC) and small-signal radio frequency (RF) characterization on AlGaN/GaN high-electron-mobility transistors (HEMTs) from 25 to 500 °C to investigate temperature-dependent variations in key device performance metrics, such as transconductance (gm), maximum-to-minimum drain current ratio (Imax/Imin), current gain cutoff frequency (fT), maximum gain frequency (fmax), unilateral power gain, and maximum stable gain. We compared prototype 140 nm AlGaN/GaN HEMTs made with regrown Ohmic contacts with production 180 nm AlGaN/GaN HEMTs made with standard alloyed Ohmic contacts. Our findings indicate that irrespective of the type of technology, DC and RF performance parameters decline with increasing temperature. Specifically, for every 100 °C increase in temperature, fT, fmax, and gain decreased by 6–8 GHz, ∼17 GHz, and ∼1 dB, respectively. These measurements provide insights onto how these GaN-based RF devices can be used in extreme thermal environments.
Article Details
Journal Info
Applied Physics Letters
American Institute of Physics
Authors (13)
Biddut K. Sarker
KBR, Inc 1 ., Beavercreek, Ohio 45431,
Nicholas P. Sepelak
KBR, Inc 1 ., Beavercreek, Ohio 45431,
Karen Nishimura
KBR, Inc 1 ., Beavercreek, Ohio 45431,
Dennis E. Walker
Air Force Research Laboratory, Sensors Directorate 2 , Wright-Patterson AFB, Dayton, Ohio 45433,
Gary Hughes
Air Force Research Laboratory, Sensors Directorate 2 , Wright-Patterson AFB, Dayton, Ohio 45433,
Isaac Wildeson
BAE Systems, Inc 3 ., Nashua, New Hampshire 03060,
Puneet Srivastava
BAE Systems, Inc 3 ., Nashua, New Hampshire 03060,
Bill Zivasatienraj
Kenneth K. Chu
BAE Systems, Inc 3 ., Nashua, New Hampshire 03060,
Shaikh S. Ahmed
School of Electrical, Computer, and Biomedical Engineering, Southern Illinois University Carbondale 4 , Carbondale, Illinois 62901,
Kelson D. Chabak
Air Force Research Laboratory, Sensors Directorate 2 , Wright-Patterson AFB, Dayton, Ohio 45433,
Andrew J. Green
Air Force Research Laboratory, Sensors Directorate 2 , Wright-Patterson AFB, Dayton, Ohio 45433,
Ahmad E. Islam
Air Force Research Laboratory, Sensors Directorate 2 , Wright-Patterson AFB, Dayton, Ohio 45433,