Temperature-dependent bandgap renormalization in ZnO ceramics sintered using concentrated solar energy

X Xuesong Zhang J Jikun Ma (Institute of Electrical Engineering, Chinese Academy of Sciences 1 , No. 6 Beiertiao, Zhongguancun, Beijing 100190,) J Junlin Zhang (College of Energy and Power Engineering, Lanzhou University of Technology 3 , Lanzhou, Gansu 730050,) Y Yan Wang D Dongqiang Lei (Institute of Electrical Engineering, Chinese Academy of Sciences 1 , No. 6 Beiertiao, Zhongguancun, Beijing 100190,) Z Zhifeng Wang

Abstract

The solar furnace enables the rapid sintering of ceramics, but the underlying mechanisms affecting optical absorption at elevated temperatures remain to be investigated. This study investigates the temperature-dependent band structure of ZnO crystals and its impact on the optical absorption of solar-sintered ZnO ceramics. The quasiparticle bandgap of ZnO is calculated using the G0W0 approximation. The renormalization effects due to electron–phonon interactions (EPIs) and lattice thermal expansion are evaluated using ab initio methods. The results demonstrate that the bandgap renormalization is primarily attributed to EPIs. The calculated reduction in the bandgap with increasing temperature agrees with that extracted from diffuse reflectance spectra of solar-sintered ZnO ceramics. Shifting the absorption edge toward longer wavelengths at higher temperatures enhances the ceramic absorption in the solar spectrum range. This study provides fundamental insights into the optical absorption properties relevant to photon-driven sintering technology.

Article Details

Volume / Issue Vol. 128, Issue 8
Published February 23, 2026
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (6)

X

Xuesong Zhang

J

Jikun Ma

Institute of Electrical Engineering, Chinese Academy of Sciences 1 , No. 6 Beiertiao, Zhongguancun, Beijing 100190,

J

Junlin Zhang

College of Energy and Power Engineering, Lanzhou University of Technology 3 , Lanzhou, Gansu 730050,

Y

Yan Wang

D

Dongqiang Lei

Institute of Electrical Engineering, Chinese Academy of Sciences 1 , No. 6 Beiertiao, Zhongguancun, Beijing 100190,

Z

Zhifeng Wang