Tailoring spin reorientation and magnetic interaction for room-temperature spintronics in Tb-doped SmFeO3 single crystal

M Mingzhu Xue (School of Physics and Astronomy, Beijing Normal University 4 , Beijing 100875,) X Xin Li S Shilei Ding Q Qixin Li (State Key Laboratory of Green Chemical Engineering and Industrial Catalysis, Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Feringa Nobel Prize Scientist Joint Research Center, School of Chemistry and Molecular Engineering) W Wenhao Di (State Key Laboratory of Functional Crystals and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences 5 , Shanghai 201899,) A Anhua Wu B Bin He (Max Planck Institute for Chemical Physics of Solids) S Shishen Yan W Wenyun Yang (Institute of Condensed Matter and Material Physics, School of Physics) J Jinbo Yang (Institute of Condensed Matter and Material Physics, School of Physics)

Abstract

Selective doping with different R-site ions in rare-earth perovskite RFeO3 compounds offers an effective way to achieve atomic-scale tuning of the complex exchange interactions. In this study, the spin reorientation temperature of Tb-doped SmFeO3 (Sm0.7Tb0.3FeO3) single crystal is lowered to approximately 350 K, making it more suitable for room-temperature applications. Notably, the magnetic compensation point is absent at low temperatures, and both R3+ and Fe3+ ion moments can be fully saturated under high magnetic fields, suggesting that Tb3+ doping drives the R3+ and Fe3+ sublattices toward ferromagnetic coupling. Moreover, the hysteresis loop along the a-axis transitions from a double triangle shape below the spin reorientation temperature to a rectangular shape above the spin reorientation temperature, and the nucleation field exhibits a strong dependence on both the measurement temperature and the maximum applied magnetic field. The above results can be explained by a modified two-domain model with mean field correction. The results of magnetic domain measurements indicate that the emergence of the double-triangular hysteresis loop is jointly determined by domain wall motion and the nonlinear response of the parasitic magnetic moment along the a-axis. These findings provide valuable insights and material for advancing the use of RFeO3 compounds in room-temperature spintronics.

Article Details

Volume / Issue Vol. 127, Issue 1
Published July 07, 2025
ISSN 0003-6951
Publisher American Institute of Physics

Journal Info

Applied Physics Letters

American Institute of Physics

ISSN: 0003-6951 Physical Sciences

Authors (10)

M

Mingzhu Xue

School of Physics and Astronomy, Beijing Normal University 4 , Beijing 100875,

X

Xin Li

S

Shilei Ding

Q

Qixin Li

State Key Laboratory of Green Chemical Engineering and Industrial Catalysis, Joint International Research Laboratory of Precision Chemistry and Molecular Engineering, Feringa Nobel Prize Scientist Joint Research Center, School of Chemistry and Molecular Engineering

W

Wenhao Di

State Key Laboratory of Functional Crystals and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences 5 , Shanghai 201899,

A

Anhua Wu

B

Bin He

Max Planck Institute for Chemical Physics of Solids

S

Shishen Yan

W

Wenyun Yang

Institute of Condensed Matter and Material Physics, School of Physics

J

Jinbo Yang

Institute of Condensed Matter and Material Physics, School of Physics